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参数资料
| 型号： | MRF15090 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN Silicon RF Power Transistor(NPN硅射频功率晶体管) |
| 中文描述： | 2 CHANNEL, L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | CASE 375A-01, 5 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 189K |
| 代理商： | MRF15090 |
MRF15090
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS — continued
Emitter–Base Breakdown Voltage
(IE = 5 mAdc, IC = 0)
V(BR)EBO
4
4.8
—
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0)
ICES
—
—
10
mAdc
ON CHARACTERISTICS
DC Current Gain
(ICE = 1 Adc, VCE = 5 Vdc)
hFE
20
40
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1 MHz) –
For Information Only. This Part Is Collector Matched.
Cob
—
52
—
pF
FUNCTIONAL TESTS
(Figure 12)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Gpe
7.5
8.3
—
dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
η
30
36
—
%
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
IMD
—
– 32
– 28
dBc
Input Return Loss
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
IRL
12
15
—
dB
Load Mismatch
(VCC = 28 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase
Angles at Frequency of Test)
ψ
No Degradation in Output Power
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF150J | 功能描述:射频MOSFET电源晶体管 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF150MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF151 | 功能描述:射频MOSFET电源晶体管 5-175MHz 150Watts 50Volt Gain 18dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF1511N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1511NT1 | 功能描述:射频MOSFET电源晶体管 RF LDMOS FET PLD1.5N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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