- 您现在的位置：买卖IC网 > PDF目录371143 > MRF15090 (MOTOROLA INC) NPN Silicon RF Power Transistor(NPN硅射频功率晶体管) PDF资料下载
参数资料
| 型号： | MRF15090 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN Silicon RF Power Transistor(NPN硅射频功率晶体管) |
| 中文描述： | 2 CHANNEL, L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | CASE 375A-01, 5 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 189K |
| 代理商： | MRF15090 |
MRF15090
6
MOTOROLA RF DEVICE DATA
N1
Figure 12. Class AB Test Fixture Electrical Schematic
B1, B2, B3, B4
C1
C2
C3, C4, C23, C24
C5, C6, C22, C25
C7, C8, C20, C21
C9, C10, C11
C12
C13, C14, C18, C19
C15
C16, C17
C26
D1
D2
Ferrite Bead, Ferroxcube
2.7 pF, B Case Chip Capacitor, ATC
0.6–4.0 pF, Variable Capacitor, Johanson
18 pF, B Case Chip Capacitor, ATC
51 pF, Chip Capacitor, Murata Erie
1800 pF, Chip Capacitor, Kemit
100
μ
F, Electrolytic Capacitor, Mallory
5.1 pF, A Case Chip Capacitor, ATC
0.1
μ
F, Chip Capacitor, Kemit
1.1 pF, B Case Chip Capacitor, ATC
470
μ
F, Electrolytic Capacitor, Mallory
0.3 pF, B Case Chip Capacitor, ATC
Diode, Motorola (MUR5120T3)
Light Emitting Diode, Industrial Devices
L1
L2, L3, L8, L9
L4, L5, L6, L7
L10
N1, N2
Q1, Q3
Q2
R1, R2, R7, R8 10
, 1/2 W, Resistor
R3
150
, 1/2 W, Resistor
R4
2 x 66
, 1/8 W, Chip Resistors in Parallel, Rohm
R5
93
, 1/8 W, Chip Resistor, Rohm
R6
22 K
, 1/8 W, Chip Resistor, Rohm
TL1 to TL10
See Photomaster
Board
Glass Teflon
, Arlon GX–0300–55–22,
ε
r = 2.55
1 Turn, 24 AWG, 0.042
″
ID Choke
3 Turn, 20 AWG, 0.126
″
ID Choke
12 Turns, 22 AWG, 0.140
″
ID Choke
3 Turns, 24 AWG, 0.046
″
ID Choke
Type N Flange Mount RF Connector, Omni Spectra
Transistor, NPN, Motorola (MJD47)
Transistor PNP Motorola (BD136)
C1
RF Input
L1
C2
TL1
TL10
TL5
TL4
TL7
TL6
C15
C12
C6
C4
L3
C8
L5
C3
L2
C5
B1
C7
R1
L4
C10
C13
C11
C14
C17
C19
L7
R8
DUT
R2
Vb
VCC
R5
Vb
Vbias
C9
Q1
Q2
D1
R3
R4
Q3
R6
D2
C16
C18
L6
R7
C20
C22
TL8
B3
L8
C24
L9
C23
TL9
C25
C26
L10
Coax 2
Balun 2
B4
B2
Balun 1
Coax 1
TL3
TL2
N2
RF Output
VCC
+
+
+
+
+
相关PDF资料 |
PDF描述 |
|---|---|
| MRF1511T1 | RF Power MOSFETs(RF功率MOS场效应管) |
| MRF1517T1 | RF Power MOSFETs(RF功率MOS场效应管) |
| MRF1535FNT1 | RF Power Field Effect Transistors |
| MRF1535T1 | RF Power Field Effect Transistor |
| MRF1535NT1 | RF Power Field Effect Transistors |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF150J | 功能描述:射频MOSFET电源晶体管 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF150MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF151 | 功能描述:射频MOSFET电源晶体管 5-175MHz 150Watts 50Volt Gain 18dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF1511N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1511NT1 | 功能描述:射频MOSFET电源晶体管 RF LDMOS FET PLD1.5N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。