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| 型号： | MRF1511NT1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/14页 |
| 文件大小： | 466K |
| 描述： | MOSFET RF N-CH PLD-1.5 |
| 产品培训模块： | RF Broadcast Solutions |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 175MHz |
| 增益： | 13dB |
| 电压 - 测试： | 7.5V |
| 额定电流： | 4A |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 8W |
| 电压 - 额定： | 40V |
| 封装/外壳： | PLD-1.5 |
| 供应商设备封装： | PLD-1.5 |
| 包装： | 标准包装 |
| 产品目录页面： | 560 (CN2011-ZH PDF) |
| 其它名称： | MRF1511NT1DKR |
MRF1511NT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequen-
cies to 175 MHz. The high gain and broadband performance of this device
makes it ideal for large-signal, common source amplifier applications in 7.5 volt
portable FM equipment.
?
Specified Performance @ 175 MHz, 7.5 Volts
Output Power ? 8 Watts
Power Gain ? 13 dB
Efficiency ? 70%
?
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
175 MHz, 2 dB Overdrive
Features
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large-Signal
Impedance Parameters
?
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
?
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +40
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current ? Continuous
ID
4
Adc
Total Device Dissipation @ TC
= 25
°C
(1)
Derate above 25°C
PD
62.5
0.5
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2)
Unit
Thermal Resistance, Junction to Case
RθJC
2
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
1. Calculated based on the formula PD
=
TJ?TC
RθJC
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE - CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF1511N
Rev. 8, 6/2009
Freescale Semiconductor
Technical Data
MRF1511NT1
175 MHz, 8 W, 7.5 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
G
D
S
?
Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1511NT1_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1511NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1511T1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513NT1 | 功能描述:射频MOSFET电源晶体管 RF LDMOS FET PLD1.5 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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