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参数资料
| 型号： | MRF1518T1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | PLASTIC, PLD-1.5, CASE 466-03, 4 PIN |
| 文件页数： | 14/20页 |
| 文件大小： | 742K |
| 代理商： | MRF1518T1 |
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MRF1518T1
RF Device Data
Freescale Semiconductor
Figure 1. 450 - 520 MHz Broadband Test Circuit
VDD
C6
R4
C7
C5
R3
RF
INPUT
RF
OUTPUT
Z2
Z3
Z6
C1
C3
C12
DUT
Z7
Z9
Z10
Z4
Z5
L1
Z8
N2
C16
B2
N1
+
C11
C10
B1, B2
Short Ferrite Beads, Fair Rite Products
(2743021446)
C1, C12
240 pF, 100 mil Chip Capacitors
C2, C3, C10, C11
0 to 20 pF Trimmer Capacitors
C4
82 pF, 100 mil Chip Capacitor
C5, C16
120 pF, 100 mil Chip Capacitors
C6, C13
10 μF, 50 V Electrolytic Capacitors
C7, C14
1,200 pF, 100 mil Chip Capacitors
C8, C15
0.1 mF, 100 mil Chip Capacitors
C9
30 pF, 100 mil Chip Capacitor
L1
55.5 nH, 5 Turn, Coilcraft
N1, N2
Type N Flange Mounts
R1
15 Ω Chip Resistor (0805)
R2
51 Ω, 1/2 W Resistor
R3
10 Ω Chip Resistor (0805)
R4
33 kΩ, 1/8 W Resistor
Z1
0.451″ x 0.080″ Microstrip
Z2
1.005″ x 0.080″ Microstrip
Z3
0.020″ x 0.080″ Microstrip
Z4
0.155″ x 0.080″ Microstrip
Z5, Z6
0.260″ x 0.223″ Microstrip
Z7
0.065″ x 0.080″ Microstrip
Z8
0.266″ x 0.080″ Microstrip
Z9
1.113″ x 0.080″ Microstrip
Z10
0.433″ x 0.080″ Microstrip
Board
Glass Teflon, 31 mils, 2 oz. Copper
Z1
C2
R1
C4
VGG
C13
+
C8
B1
R2
C14
C15
C9
TYPICAL CHARACTERISTICS, 450 - 520 MHz
Pout, OUTPUT POWER (WATTS)
IRL,
INPUT
RETURN
LOSS
(dB)
5
15
20
10
2
0
11
1
Figure 2. Output Power versus Input Power
Pin, INPUT POWER (WATTS)
2
Figure 3. Input Return Loss
versus Output Power
0.3
P out
,
OUTPUT
POWER
(W
A
TTS)
0
6
0.5
0.1
4
520 MHz
470 MHz
500 MHz
0.4
0.6
0.2
0
12
450 MHz
3
520 MHz
470 MHz
500 MHz
450 MHz
10
8
5
46
7
9
810
VDD = 12.5 Vdc
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF151A | 功能描述:射频MOSFET电源晶体管 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF151G | 功能描述:射频MOSFET电源晶体管 5-175MHz 300Watts 50Volt Gain 14dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF151GB | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF151GC | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF151GMP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
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