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参数资料
| 型号： | MRF1518T1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | PLASTIC, PLD-1.5, CASE 466-03, 4 PIN |
| 文件页数： | 2/20页 |
| 文件大小： | 742K |
| 代理商： | MRF1518T1 |
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HIVE
INF
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RMA
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ARCHIVE
INFORMA
TION
RF Device Data
Freescale Semiconductor
MRF1518T1
TYPICAL CHARACTERISTICS, 135 - 175 MHz
155 MHz
6
Pout, OUTPUT POWER (WATTS)
50
0
80
012
Ef
f,DRAIN
EFFICIENCY
(%)
30
60
40
9
3
Ef
f,DRAIN
EFFICIENCY
(%)
Figure 31. Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
9
7
17
Figure 32. Drain Efficiency versus Output
Power
2
GAIN
(dB)
0
Figure 33. Output Power versus
Biasing Current
12
IDQ, BIASING CURRENT (mA)
0
Figure 34. Drain Efficiency versus
Biasing Current
70
IDQ, BIASING CURRENT (mA)
45
Figure 35. Output Power versus
Supply Voltage
8
VDD, SUPPLY VOLTAGE (VOLTS)
2
Figure 36. Drain Efficiency versus
Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
30
9
13
8
0
40
60
30
400
0
7
12
600
1000
80
2
6
4
11
19
200
50
4
15
P out
,
OUTPUT
POWER
(W
A
TTS)
200
1000
400
600
P out
,
OUTPUT
POWER
(W
A
TTS)
12
916
11
12
11
13
16
3
1
65
55
3
6
4
5
Ef
f,DRAIN
EFFICIENCY
(%)
50
70
35
155 MHz
135 MHz
175 MHz
20
10
135 MHz
175 MHz
155 MHz
135 MHz
175 MHz
155 MHz
135 MHz
175 MHz
155 MHz
135 MHz
175 MHz
155 MHz
135 MHz
175 MHz
VDD = 12.5 Vdc
Pin = 24.5 dBm
IDQ = 150 mA
Pin = 24.5 dBm
VDD = 12.5 Vdc
Pin = 24.5 dBm
IDQ = 150 mA
Pin = 24.5 dBm
68
7
5
10
12
11
9
13
410
7
15
11
8
2
70
10
8
800
40
35
10
15
14
11
10
8
9
10
14
15
45
65
55
75
VDD = 12.5 Vdc
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF151A | 功能描述:射频MOSFET电源晶体管 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF151G | 功能描述:射频MOSFET电源晶体管 5-175MHz 300Watts 50Volt Gain 14dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF151GB | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF151GC | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF151GMP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
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