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参数资料
| 型号： | MRF1518T1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | PLASTIC, PLD-1.5, CASE 466-03, 4 PIN |
| 文件页数： | 16/20页 |
| 文件大小： | 742K |
| 代理商： | MRF1518T1 |
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MRF1518T1
RF Device Data
Freescale Semiconductor
Figure 10. 820 - 850 MHz Broadband Test Circuit
VDD
RF
INPUT
RF
OUTPUT
C1
DUT
L1
N2
N1
B1, B2
Long Ferrite Beads, Fair Rite Products
C1, C9
12 pF, 100 mil Chip Capacitors
C2
6.8 pF, 100 mil Chip Capacitor
C3, C4
20 pF, 100 mil Chip Capacitors
C5
51 pF, 100 mil Chip Capacitor
C6, C13
1000 pF, 100 mil Chip Capacitors
C7, C14
0.039 μF, 100 mil Chip Capacitors
C8
1 μF, 20 V Tantalum Chip Capacitor
C10
3 pF, 100 mil Chip Capacitor
C11, C12
51 pF, 100 mil Chip Capacitors
C15
22 μF, 35 V Tantalum Chip Capacitor
L1, L2
18.5 nH, 5 Turn, Coilcraft
N1, N2
Type N Flange Mounts
R1
47 Ω Chip Resistor (0805)
Z1
1.145″ x 0.080″ Microstrip
Z2
0.786″ x 0.080″ Microstrip
Z3
0.115″ x 0.223″ Microstrip
Z4
0.145″ x 0.223″ Microstrip
Z5
0.260″ x 0.223″ Microstrip
Z6
0.081″ x 0.080″ Microstrip
Z7
0.104″ x 0.080″ Microstrip
Z8
1.759″ x 0.080″ Microstrip
Board
Glass Teflon, 31 mils, 2 oz. Copper
VGG
B1
R1
L2
Z1
C2
Z2
Z3
C3
C4
Z4
+
C8
C7
C6
C5
Z5
Z6
C9
Z7
C10
Z8
C11
B2
C12
C13
C14
C15
+
TYPICAL CHARACTERISTICS, 820 - 850 MHz
Pout, OUTPUT POWER (WATTS)
IRL,
INPUT
RETURN
LOSS
(dB) 10
30
40
20
2
1
0
12
Figure 11. Output Power versus Input Power
Pin, INPUT POWER (WATTS)
4
Figure 12. Input Return Loss
versus Output Power
0.3
P out
,
OUTPUT
POWER
(W
A
TTS)
0
6
0.5
0.1
2
820 MHz
830 MHz
0.4
0.6
0.2
0
12
840 MHz
3
8
10
46
57
8
9
10
11
VDD = 12.5 Vdc
850 MHz
820 MHz
830 MHz
840 MHz
850 MHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF151A | 功能描述:射频MOSFET电源晶体管 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF151G | 功能描述:射频MOSFET电源晶体管 5-175MHz 300Watts 50Volt Gain 14dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF151GB | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF151GC | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF151GMP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
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