参数资料
型号: MRF1570FNT1
厂商: Freescale Semiconductor
文件页数: 12/23页
文件大小: 616K
描述: IC MOSFET RF N-CHAN TO272-8
标准包装: 1
晶体管类型: LDMOS
频率: 470MHz
增益: 11.5dB
电压 - 测试: 12.5V
额定电流: 1µA
电流 - 测试: 800mA
功率 - 输出: 70W
电压 - 额定: 40V
封装/外壳: TO-272BA
供应商设备封装: TO-272-6 绕接
包装: 标准包装
其它名称: MRF1570FNT1DKR
2
RF Device Data
Freescale Semiconductor
MRF1570NT1 MRF1570FNT1
Table 5. Electrical Characteristics (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(VDS
= 60 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μA
On Characteristics
Gate Threshold Voltage
(VDS
= 12.5 Vdc, I
D
= 0.8 mAdc)
VGS(th)
1
?
3
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 2.0 Adc)
VDS(on)
?
?
1
Vdc
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(VDS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Ciss
?
?
500
pF
Output Capacitance
(VDS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Coss
?
?
250
pF
Reverse Transfer Capacitance
(VDS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Crss
?
?
35
pF
RF Characteristics
(In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD
= 12.5 Vdc, P
out
= 70 W, I
DQ
= 800 mA) f = 470 MHz
Gps
?
11.5
?
dB
Drain Efficiency
(VDD
= 12.5 Vdc, P
out
= 70 W, I
DQ
= 800 mA) f = 470 MHz
η
?
60
?
%
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