参数资料
型号: MRF1570FNT1
厂商: Freescale Semiconductor
文件页数: 7/23页
文件大小: 616K
描述: IC MOSFET RF N-CHAN TO272-8
标准包装: 1
晶体管类型: LDMOS
频率: 470MHz
增益: 11.5dB
电压 - 测试: 12.5V
额定电流: 1µA
电流 - 测试: 800mA
功率 - 输出: 70W
电压 - 额定: 40V
封装/外壳: TO-272BA
供应商设备封装: TO-272-6 绕接
包装: 标准包装
其它名称: MRF1570FNT1DKR
MRF1570NT1 MRF1570FNT1
15
RF Device Data
Freescale Semiconductor
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, ?Impedance
Matching Networks Applied to RF Power Transistors.?
Large-signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region. See
Freescale Application Note AN215A, ?RF Small-Signal
Design Using Two-Port Parameters? for a discussion of two
port network theory and stability.
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