参数资料
型号: MRF1570FNT1
厂商: Freescale Semiconductor
文件页数: 15/23页
文件大小: 616K
描述: IC MOSFET RF N-CHAN TO272-8
标准包装: 1
晶体管类型: LDMOS
频率: 470MHz
增益: 11.5dB
电压 - 测试: 12.5V
额定电流: 1µA
电流 - 测试: 800mA
功率 - 输出: 70W
电压 - 额定: 40V
封装/外壳: TO-272BA
供应商设备封装: TO-272-6 绕接
包装: 标准包装
其它名称: MRF1570FNT1DKR
22
RF Device Data
Freescale Semiconductor
MRF1570NT1 MRF1570FNT1
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
?
AN211A: Field Effect Transistors in Theory and Practice
?
AN215A: RF Small-Signal Design Using Two-Port Parameters
?
AN721: Impedance Matching Networks Applied to RF Power Transistors
?
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
?
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
?
AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
?
AN4005: Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the
Software & Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
9
June 2008
?
Corrected specified performance values for power gain and efficiency on p. 1 to match typical performance
values in the functional test table on p. 2
?
Replaced Case Outline 1366-04 with 1366-05, Issue E, p. 1, 16-18. Removed Drain-ID label from View
Y-Y. Added Pin 9 designation. Changed dimensions D2 and E2 from basic to .604 Min and .162 Min,
respectively.
?
Replaced Case Outline 1366A-02 with 1366A-03, Issue D, p. 1, 19-21. Removed Drain-ID label from View
Y-Y. Removed Surface Alignment tolerance label for cross hatched section on View Y-Y. Added Pin 9
designation. Changed dimensions D2 and E2 from basic to .604 Min and .162 Min, respectively. Added
dimension E3. Restored dimensions F and P designators to DIM column on Sheet 3.
?
Added Product Documentation and Revision History, p. 22
10
June 2009
?
Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 1
?
Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to
Product Documentation, Application Notes, p. 22
?
Added Electromigration MTTF Calculator availability to Product Software, p. 22
相关PDF资料
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相关代理商/技术参数
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MRF1570NT1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
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