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参数资料
| 型号： | MRF1946 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF POWER TRANSISTORS NPN SILICON |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | CASE 211-07, 4 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 141K |
| 代理商： | MRF1946 |
1
MRF1946 MRF1946A
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for 12.5 volt large–signal power amplifiers in commercial and
industrial equipment.
High Common Emitter Power Gain
Specified 12.5 V, 175 MHz Performance
Output Power = 30 Watts
Power Gain = 10 dB
Efficiency = 60%
Diffused Emitter Resistor Ballasting
Characterized to 220 MHz
Load Mismatch at High Line and Overdrive Conditions
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
16
Vdc
Collector–Base Voltage
36
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
8.0
Adc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
100
0.57
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.75
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
V(BR)CEO
16
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V(BR)CES
36
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25
°
C)
ICES
—
—
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
hFE
40
75
150
—
(continued)
Order this document
by MRF1946/D
SEMICONDUCTOR TECHNICAL DATA
30 W, 136–220 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 211–07, STYLE 1
MRF1946
CASE 145A–09, STYLE 1
MRF1946A
REV 6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1946A | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MRF1A(AMMO) | 制造商:Bel Fuse 功能描述:FUSE |
| MRF1K50GNR5 | 功能描述:WIDEBAND RF POWER LDMOS TRANSIST 制造商:nxp usa inc. 系列:- 包装:剪切带（CT） 零件状态:在售 晶体管类型:LDMOS 频率:1.8MHz ~ 500MHz 增益:23dB 电压 - 测试:50V 额定电流:- 噪声系数:- 功率 - 输出:1500W 电压 - 额定:50V 封装/外壳:OM-1230G-4L 供应商器件封装:OM-1230G-4L 标准包装:1 |
| MRF1K50HR5 | 功能描述:HIGH POWER RF TRANSISTOR 制造商:nxp usa inc. 系列:- 包装:剪切带（CT） 零件状态:在售 晶体管类型:LDMOS 频率:1.8MHz ~ 500MHz 增益:22.5dB 额定电流:- 噪声系数:- 功率 - 输出:1500W 电压 - 额定:50V 封装/外壳:SOT-979A 供应商器件封装:NI-1230-4H 标准包装:1 |
| MRF1K50H-TF1 | 功能描述:MRF1K50H 87.5-108 MHZ EVAL BOARD 制造商:nxp usa inc. 系列:- 零件状态:在售 类型:晶体管 频率:87.5MHz ~ 108MHz 配套使用产品/相关产品:MRF1K50H 所含物品:板 标准包装:1 |
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