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| 型号： | MRF6P27160HR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 487K |
| 描述： | MOSFET RF N-CHAN 28V 35W NI-1230 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.66GHz |
| 增益： | 14.6dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.8A |
| 功率 - 输出： | 35W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
MRF6P27160HR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 2600 to
2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
?
Typical Single-Carrier N-CDMA Performance: VDD
= 28 Volts, I
DQ
=
1800 mA, Pout
= 35 Watts Avg., f = 2660 MHz, IS-95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain ? 14.6 dB
Drain Efficiency ? 22.6%
ACPR @ 885 kHz Offset ? -47.8 dBc in 30 kHz Bandwidth
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 160 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
?
RoHS Compliant
?
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 160 W CW
Case Temperature 71°C, 35 W CW
RθJC
0.29
0.31
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6P27160H
Rev. 2, 12/2008
Freescale Semiconductor
Technical Data
MRF6P27160HR6
2600-2700 MHz, 35 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375D-05, STYLE 1
NI-1230
?
Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
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| MRF6P27160HR6 | 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ 35W NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P27160HR6_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P3300H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P3300HR3 | 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P3300HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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