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参数资料
| 型号： | MRF6P27160HR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 4/11页 |
| 文件大小： | 487K |
| 描述： | MOSFET RF N-CHAN 28V 35W NI-1230 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.66GHz |
| 增益： | 14.6dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.8A |
| 功率 - 输出： | 35W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF6P27160HR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS
= 68 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(1)
(VDS
= 10 Vdc, I
D
= 250
μ
Adc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(3)
(VDD
= 28 Vdc, I
D
= 1800 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(1)
(VGS
= 10 Vdc, I
D
= 2.2 Adc)
VDS(on)
?
0.21
0.3
Vdc
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
2.8
?
pF
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1800 mA, P
out
= 35 W Avg. N-CDMA, f = 2660 MHz,
Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13
14.6
16
dB
Drain Efficiency
ηD
20
22.6
?
%
Adjacent Channel Power Ratio
ACPR
?
-47.8
-45
dBc
Input Return Loss
IRL
?
-13
-9
dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push-pull configuration.
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