参数资料
型号: MRF6P27160HR5
厂商: Freescale Semiconductor
文件页数: 7/11页
文件大小: 487K
描述: MOSFET RF N-CHAN 28V 35W NI-1230
标准包装: 50
晶体管类型: LDMOS
频率: 2.66GHz
增益: 14.6dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 1.8A
功率 - 输出: 35W
电压 - 额定: 68V
封装/外壳: NI-1230
供应商设备封装: NI-1230
包装: 带卷 (TR)
MRF6P27160HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
14
?60
2600 26902610 2630 26402620
2650
2660
2670
2680
2700
?15
?11
?12
?13
?14
?16
?14
?10
?11
?12
?13
?15
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
2630 2640
2650
2660
2670
2680
2690
2700
2600
2610
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ Pout
= 35 Watts Avg.
2620
16
15.8
?65
24
22
?40
?50
?55
IRL
Gps
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ Pout
= 70 Watts Avg.
15.2
15.1
35
31
?30
?35
?45
?55
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
10 400100
12
17
0.1
IDQ
= 2700 mA
2250 mA
Pout, OUTPUT POWER (WATTS) PEP
16
15
14
?30
1
IDQ
= 900 mA
Pout, OUTPUT POWER (WATTS) PEP
100
?40
?50
?60
10
η
D
, DRAIN
EFFICIENCY (%)
ηD
η
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
15.4
15
IDQ
= 1800 mA, N?CDMA IS?95 Pilot,
Sync, Paging, Traffic Codes 8 Through 13
14.8
14.6
14.2
14
15.2
VDD= 28 Vdc, Pout
= 35 W (Avg.),
14.9
14.7
14.5
14.3
13
900 mA
?20
1800 mA
14.4
15.6
?60
?45
20
15
14.8
14.6
14.4
33
?40
?50
ηD
ACPR
VDD
= 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two?Tone Measurements, 2.5 MHz Tone Spacing
1350 mA
IRL
ALT1
14.2
14.1
?10
ALT1
VDD= 28 Vdc, Pout
= 70 W (Avg.),
IDQ
= 1800 mA, N?CDMA IS?95 Pilot,
Sync, Paging, Traffic Codes 8 Through 13
1
1800 mA
1350 mA
0.1
VDD
= 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two?Tone Measurements, 2.5 MHz Tone Spacing
2250 mA
2700 mA
23
21
34
32
30
300
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