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参数资料
| 型号： | MRF6P27160HR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 2/11页 |
| 文件大小： | 487K |
| 描述： | MOSFET RF N-CHAN 28V 35W NI-1230 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.66GHz |
| 增益： | 14.6dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.8A |
| 功率 - 输出： | 35W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
10
RF Device Data
Freescale Semiconductor
MRF6P27160HR6
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
2
Dec. 2008
?
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
?
Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
?
Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table; related
?Continuous use at maximum temperature will affect MTTF? footnote added, p. 1
?
Corrected VDS
to V
DD
in the RF test condition voltage callout for V
GS(Q), and added ?Measured in
Functional Test?, On Characteristics table, p. 2
?
Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
?
Changed ?Z2, Z31? to ?Z2, Z30? and ?Z3, Z30? to ?Z3, Z31? in Z list for Fig. 1, Test Circuit Schematic, p. 3
?
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
?
Adjusted scale for Fig. 5, Two-Tone Power Gain versus Output Power, to better match the device?s
capabilities, p. 5
?
Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
?
Replaced Fig. 12, MTTF versus Junction Temperature, with updated graph. Removed Amps2
and listed
operating characteristics and location of MTTF calculator for device, p. 7
?
Added Product Documentation and Revision History, p. 10
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相关代理商/技术参数 |
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|---|---|
| MRF6P27160HR6 | 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ 35W NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P27160HR6_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P3300H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P3300HR3 | 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P3300HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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