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| 型号： | MRF6S19100GNR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 13/16页 |
| 文件大小： | 928K |
| 描述： | MOSFET RF N-CH 28V TO-270-2 GW |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 1.99GHz |
| 增益： | 14.5dB |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 950mA |
| 功率 - 输出： | 22W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270BB |
| 供应商设备封装： | TO-270 WB-4 鸥翼形 |
| 包装： | 带卷 (TR) |
6
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
1 10010
-- 6 0
-- 1 0
0.1
7th Order
TWO--TONE SPACING (MHz)
VDD
=28Vdc,Pout
= 100 W (PEP), IDQ
= 950 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
5th Order
3rd Order
-- 2 0
-- 3 0
-- 4 0
-- 5 0
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2--Carrier N--CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
-- 7 0
Pout, OUTPUT POWER (WATTS) AVG.
50
-- 2 0
40
-- 3 0
30
-- 4 0
-- 5 0
10
-- 6 0
1 10 100
20
42
59
Pin, INPUT POWER (dBm)
45
32 34 36
57
55
51
53
49
38 40
30
100
18
1
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD
=28Vdc
IDQ
= 950 mA
f = 1960 MHz
10
16
15
14
13
12
11
60
C
85_C
50
40
30
20
10
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD
=24V
IM3
Gps
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULATIO
N DISTORTION (dBc)
IM3 (dBc), ACPR (dBc)
η
D
, DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
200
10
16
050100 150
13
12
11
15
14
28 V
IDQ
= 950 mA
f = 1960 MHz
P
out
, OUTPUT POWER (dBm)
G
ps
, POWER GAIN (dB)
47
ηD
300
32 V
VDD
=28Vdc,IDQ
= 950 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 1960 MHz
Actual
Ideal
P3dB = 52.156 dBm (164.29 W)
ACPR
TC
=85_C
25_C
85_C
-- 3 0_C
-- 3 0_C
-- 3 0_C
85_C
25_C
TC
=--30_C
85_C
17
-- 3 0_C
25_
P1dB = 51.13 dBm (129.72 W)
VDD=28Vdc,IDQ
= 950 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2--Carrier N--CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability(CCDF)
200
25_C
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19100HR3 | 功能描述:射频MOSFET电源晶体管 HV6 WCDMA 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19100HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19100HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19100HR5 | 功能描述:射频MOSFET电源晶体管 HV6 WCDMA 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19100HS | 制造商:Freescale Semiconductor 功能描述: |
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