参数资料
型号: MRF6S19100GNR1
厂商: Freescale Semiconductor
文件页数: 15/16页
文件大小: 928K
描述: MOSFET RF N-CH 28V TO-270-2 GW
产品变化通告: RF Devices Discontinuation 01/Jul/2010
标准包装: 500
晶体管类型: LDMOS
频率: 1.99GHz
增益: 14.5dB
电压 - 测试: 28V
电流 - 测试: 950mA
功率 - 输出: 22W
电压 - 额定: 68V
封装/外壳: TO-270BB
供应商设备封装: TO-270 WB-4 鸥翼形
包装: 带卷 (TR)
8
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
f
MHz
Zsource
?
Zload
?
1930
1960
1990
1.74 -- j3.11
1.63 -- j2.55
1.67 -- j2.85
2.51 -- j4.80
2.31 -- j4.54
2.12 -- j4.20
VDD
=28Vdc,IDQ
= 950 mA, Pout
=22WAvg.
Zo
=5?
f = 1990 MHz
f = 1930 MHz
Zsource
= Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zload
Zsource
f = 1930 MHz
f = 1990 MHz
Figure 15. Series Equivalent Source and Load Impedance
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
相关PDF资料
PDF描述
MRF6S19100HSR5 MOSFET RF N-CHAN 28V 22W NI-780S
MRF6S19120HSR5 MOSFET RF N-CHAN 28V 19W NI-780S
MRF6S19140HSR5 MOSFET RF N-CHAN 28V 29W NI-880S
MRF6S19200HSR5 MOSFET RF N-CH 56W 28V NI780S
MRF6S20010GNR1 MOSFT RF N-CH 28V 10W TO270-2 GW
相关代理商/技术参数
参数描述
MRF6S19100HR3 功能描述:射频MOSFET电源晶体管 HV6 WCDMA 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S19100HR3_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HR3_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HR5 功能描述:射频MOSFET电源晶体管 HV6 WCDMA 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S19100HS 制造商:Freescale Semiconductor 功能描述: