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参数资料
| 型号： | MRF6S19100GNR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 14/16页 |
| 文件大小： | 928K |
| 描述： | MOSFET RF N-CH 28V TO-270-2 GW |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 1.99GHz |
| 增益： | 14.5dB |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 950mA |
| 功率 - 输出： | 22W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270BB |
| 供应商设备封装： | TO-270 WB-4 鸥翼形 |
| 包装： | 带卷 (TR) |
MRF6S19100NR1 MRF6S19100NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 12. MTTF Factor versus Junction Temperature
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD
=28Vdc,Pout
= 22 W Avg., and
ηD
= 25.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
N--CDMA TEST SIGNAL
246810
0.0001
100
0
PEAK--TO--AVERAGE (dB)
10
1
0.1
0.01
0.001
IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @
±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on
CCDF.
PROBABILITY (%)
f, FREQUENCY (MHz)
--100
0
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
-- 8 0
-- 9 0
--ACPR in 30 kHz
Integrated BW
+ACPRin30kHz
Integrated BW
-- I M 3 i n
1.2288 MHz
Integrated BW
+IM3 in
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
-- 7 . 5 7 . 56
1.5 4.53
0
-- 1 . 5
-- 3
-- 4 . 5
-- 6
(dB)
Figure 13. 2--Carrier CCDF N--CDMA
Figure 14. 2--Carrier N--CDMA Spectrum
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6S19100HSR5 | MOSFET RF N-CHAN 28V 22W NI-780S |
| MRF6S19120HSR5 | MOSFET RF N-CHAN 28V 19W NI-780S |
| MRF6S19140HSR5 | MOSFET RF N-CHAN 28V 29W NI-880S |
| MRF6S19200HSR5 | MOSFET RF N-CH 56W 28V NI780S |
| MRF6S20010GNR1 | MOSFT RF N-CH 28V 10W TO270-2 GW |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19100HR3 | 功能描述:射频MOSFET电源晶体管 HV6 WCDMA 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19100HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19100HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19100HR5 | 功能描述:射频MOSFET电源晶体管 HV6 WCDMA 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19100HS | 制造商:Freescale Semiconductor 功能描述: |
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