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参数资料
| 型号： | MRF6S19140HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件页数： | 10/11页 |
| 文件大小： | 405K |
| 代理商： | MRF6S19140HSR3 |
8
RF Device Data
Freescale Semiconductor
MRF6S19140HR3 MRF6S19140HSR3
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
1900
1930
1960
1.13 - j0.67
1.07 - j0.46
1.11 - j0.60
2.27 - j3.95
2.00 - j4.24
1.72 - j3.96
VDD = 28 Vdc, IDQ = 1150 mA, Pout = 29 W Avg.
Zo = 5 Ω
Zload
f = 1900 MHz
f = 2020 MHz
Zsource
1990
2020
1.01 - j0.17
1.06 - j0.30
1.80 - j3.51
1.69 - j3.17
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 1900 MHz
f = 2020 MHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19140HSR5 | 功能描述:射频MOSFET电源晶体管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19200H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S19200HR3 | 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19200HR5 | 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19200HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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