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参数资料
| 型号： | MRF6S19140HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件页数： | 7/11页 |
| 文件大小： | 405K |
| 代理商： | MRF6S19140HSR3 |
MRF6S19140HR3 MRF6S19140HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
10
28
12
14
16
18
20
22
24
26
30
η
D
,DRAIN
EFFICIENCY
(%)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
2000
1910
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ Pout = 29 Watts Avg.
10
28
VDD = 28 Vdc, Pout = 29 W (Avg.), IDQ = 1150 mA
2 Carrier NCDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
1970
1950
1930
0
20
18
16
14
12
8
6
4
100
40
30
20
10
20
40
60
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ Pout = 75 Watts Avg.
2
18
16
12
10
8
6
4
80
50
30
20
0
20
40
60
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
12
18
1
IDQ = 1700 mA
1500 mA
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two Tone Measurements, 2.5 MHz Tone Spacing
900 mA
16
15
13
10
400
10
1
100
20
30
40
1000
60
50
10
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
G
ps
,POWER
GAIN
(dB)
Pout, OUTPUT POWER (WATTS) PEP
G
ps
,POWER
GAIN
(dB)
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
10
2
1920
1940
1960
1980
1990
0
80
12
14
16
18
20
22
24
26
30
14
2000
1910
1970
1950
1930
1920
1940
1960
1980 1990
40
VDD = 28 Vdc, Pout = 75 W (Avg.), IDQ = 1150 mA
2 Carrier NCDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
17
14
1150 mA
600 mA
IDQ = 1700 mA
1500 mA
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two Tone Measurements, 2.5 MHz Tone Spacing
900 mA
1150 mA
600 mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19140HSR5 | 功能描述:射频MOSFET电源晶体管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19200H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S19200HR3 | 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19200HR5 | 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19200HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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