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参数资料
| 型号： | MRF6S19140HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件页数： | 8/11页 |
| 文件大小： | 405K |
| 代理商： | MRF6S19140HSR3 |
6
RF Device Data
Freescale Semiconductor
MRF6S19140HR3 MRF6S19140HSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
60
0
0.1
7th Order
TWO TONE SPACING (MHz)
VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1150 mA
Two Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
5th Order
3rd Order
10
20
30
40
50
1
100
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
70
Pout, OUTPUT POWER (WATTS) AVG.
50
20
40
30
40
50
10
60
1
10
100
20
VDD = 28 Vdc, IDQ = 1150 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 Carrier NCDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
TC = 25°C
42
58
31
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1150 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 1960 MHz
56
54
52
50
46
32
34
33
36
35
39
37
Actual
Ideal
P1dB = 52.3 dBm (171 W)
57
55
51
53
49
38
40
41
28
100
10
17
1
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc, IDQ = 1150 mA
f = 1960 MHz, TC = 25°C
10
16
15
14
13
12
11
60
50
40
30
20
10
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD = 32 V
IM3
Gps
ACPR
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
IM3
(dBc),
ACPR
(dBc)
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
250
8
18
0
200
50
17
13
12
11
10
9
100
150
15
14
16
28 V
IDQ = 1150 mA
f = 1960 MHz
P
out
,OUTPUT
POWER
(dBm)
G
ps
,POWER
GAIN
(dB)
48
47
30
29
P3dB = 53.1 dBm (204 W)
ηD
300
24 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19140HSR5 | 功能描述:射频MOSFET电源晶体管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19200H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S19200HR3 | 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19200HR5 | 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19200HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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