参数资料
型号: MRF6S19140HSR3
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN
文件页数: 6/11页
文件大小: 405K
代理商: MRF6S19140HSR3
4
RF Device Data
Freescale Semiconductor
MRF6S19140HR3 MRF6S19140HSR3
Figure 2. MRF6S19140HR3(HSR3) Test Circuit Component Layout
C13
R1
C7
C1
C3
R5
B1
R3
R2
C8
C14
R4
B2
R6
C4
C5
C9 C11
C15
C2
C6
C10 C12
6S19140
CUT
OUT
AREA
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These
changes will have no impact on form, fit or function of the current product.
Motorola, Inc.
2002
DS1464
相关PDF资料
PDF描述
MRF6S19140HR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S19200HR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S19200HSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S20010GNR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270BA
MRF6S20010NR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
相关代理商/技术参数
参数描述
MRF6S19140HSR5 功能描述:射频MOSFET电源晶体管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S19200H 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S19200HR3 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S19200HR5 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S19200HSR3 功能描述:射频MOSFET电源晶体管 HV6 1.9GHZ 56W 28V NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray