参数资料
型号: MRF6S21140HSR5
厂商: Freescale Semiconductor
文件页数: 11/14页
文件大小: 826K
描述: MOSFET RF N-CHAN 28V 30W NI-880S
标准包装: 50
晶体管类型: LDMOS
频率: 2.11GHz
增益: 15.5dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 1.2A
功率 - 输出: 30W
电压 - 额定: 68V
封装/外壳: NI-880S
供应商设备封装: NI-880S
包装: 带卷 (TR)
6
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
TYPICAL CHARACTERISTICS
IM3 (dBc), ACPR (dBc)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
1 10010
-- 6 0
-- 1 0
0.1
7th Order
TWO--TONE SPACING (MHz)
VDD
=28Vdc,Pout
= 140 W (PEP), IDQ
= 1200 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
5th Order
3rd Order
-- 2 0
-- 3 0
-- 4 0
-- 5 0
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2--Carrier W--CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
0--6012
Pout, OUTPUT POWER (WATTS) AVG.
35
-- 2 5C
25
C
25_C
IM3
-- 3 0
20
-- 3 5
15
-- 4 0
5
-- 5 0
1 10 100
-- 4 5
10
VDD=28Vdc,IDQ
= 1200 mA
f1 = 2135 MHz, f2 = 2145 MHz
2--Carrier W--CDMA, 10 MHz Carrier
85_C
Spacing. 3.84 MHz Channel
Bandwidth. PAR = 8.5 dB
@ 0.01% Probability(CCDF)
44
58
P3dB = 52.6 dBm (180 W)
Pin, INPUT POWER (dBm)
VDD
=28Vdc,IDQ
= 1200 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2140 MHz
56
54
52
50
48
34 4036
38 42
Actual
Ideal
P1dB = 52 dBm (158.5 W)
57
55
51
53
49
32
1000
18
VDD
=28Vdc
1
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
IDQ
= 1200 mA
17
f = 2140 MHz
TC
=--30_C
25_C
-- 3 0_C
100
10
16
15
14
13
50
40
30
20
10
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
C
Gps
TC
=--30_
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
η
D
, DRAIN EFFICIENCY (%)
IMD, INTERMODULATIO
N DISTORTION (dBc)
P
out
, OUTPUT POWER (dBm)
ηD
Gps
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
VDD
=24V
250
9
16
0 20050
100 150
12
11
10
14
13
15
IDQ
= 1200 mA
f = 2140 MHz
30
-- 5 5
ηD
25_C
-- 3 0_
85_
-- 3 0_C
-- 3 0_C
25_C
85_C
ACPR
25_C
85_C
85_C
25_C
85_C
28 V
32 V
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MRF6S21190HR5 功能描述:射频MOSFET电源晶体管 HV6 2.1GHZ 54W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S21190HSR3 功能描述:射频MOSFET电源晶体管 HV6 2.1GHZ 54W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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