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| 型号： | MRF6S21140HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 5/14页 |
| 文件大小： | 826K |
| 描述： | MOSFET RF N-CHAN 28V 30W NI-880S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 15.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.2A |
| 功率 - 输出： | 30W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-880S |
| 供应商设备封装： | NI-880S |
| 包装： | 带卷 (TR) |
MRF6S21140HR3 MRF6S21140HSR3
13
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the
Software & Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
4
May 2007
?
Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
?
Removed ?Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications? bullet
as functionality is standard, p. 1
?
Added ?Optimized for Doherty Applications? bullet to Features section, p. 1
?
Removed Total Device Dissipation from Max Ratings table as data was redundant
(information already
provided in Thermal Characteristics table), p. 1
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
?Continuous use at maximum temperature will affect MTTF? footnote added, p. 1
?
Corrected VDS
to VDD
in the RF test condition voltage callout for VGS(Q)
and added ?Measured in
Functional Test?, On Characteristics table, p. 2
?
Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
?
Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
?
Adjusted scale for Fig. 5, Two--Tone Power Gain versus Output Power, to better match the device?s
capabilities, p. 5
?
Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
?
Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2
and listed
operating characteristics and location
of MTTF calculator for device, p. 7
?
Added Product Documentation and Revision History, p. 10
5
Feb. 2010
?
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
?
Added On Characteristic VDS(on)
Min value, p. 2
?
Added Electromigration MTTF Calculator and RF High
Power Model availability to Product Software, p. 13
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6S21190HSR5 | MOSFET RF N-CH 54W NI880S |
| MRF6S23100HSR5 | MOSFET RF N-CHAN 28V 20W NI-780S |
| MRF6S23140HSR5 | MOSFET RF N-CHAN 28W 28W NI-880S |
| MRF6S24140HS | IC MOSFET RF N-CHAN NI-880S |
| MRF6S27015NR1 | IC MOSFET RF N-CHAN TO270-2 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S21190H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S21190HR3 | 功能描述:射频MOSFET电源晶体管 HV6 2.1GHZ 54W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S21190HR5 | 功能描述:射频MOSFET电源晶体管 HV6 2.1GHZ 54W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S21190HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 2.1GHZ 54W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S21190HSR5 | 功能描述:射频MOSFET电源晶体管 HV6 2.1GHZ 54W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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