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参数资料
| 型号： | MRF6S9045NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 9/18页 |
| 文件大小： | 783K |
| 描述： | MOSFET RF N-CH 28V 10W TO-270-2 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 880MHz |
| 增益： | 22.7dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 350mA |
| 功率 - 输出： | 10W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270AA |
| 供应商设备封装： | TO-270-2 |
| 包装： | 带卷 (TR) |
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MRF6S9045NR1 MRF6S9045NBR1
17
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
?
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
4
Aug. 2008
?
Listed replacement part and Device Migration notification reference number, p. 1
?
Listed MRF6S9045NBR1 as no longer manufactured, p. 1
?
Replaced Case Outline 1265-08 with 1265-09, Issue K, p. 1, 11-13. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min-Max .290-.320 to .290 Min; E3 changed from Min-Max .150-.180 to .150 Min). Added JEDEC
Standard Package Number.
?
Replaced Case Outline 1337-03 with 1337-04, p. 1, 14-16. Issue D: Removed Drain-ID label from View
Y-Y on Sheet 2. Renamed E2 to E3. Added cross-hatch region dimensions D2 and E2. Added JEDEC
Standard Package Number. Issue E: Corrected document number 98ASA99191D on Sheet 3.
?
Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
?
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
?Continuous use at maximum temperature will affect MTTF? footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
?
Corrected VDS
to V
DD
in the RF test condition voltage callout for V
GS(Q)
and added ?Measured in
Functional Test?, On Characteristics table, p. 2
?
Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
?
Corrected Ciss
test condition to indicate AC stimulus on the V
GS
connection versus the V
DS
connection,
Dynamic Characteristics table, p. 2
?
Updated Part Numbers in Table 6 Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
?
Adjusted scale for Fig. 5, Two-Tone Power Gain versus Output Power, to better match the device?s
capabilities, p. 6
?
Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 8
?
Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2
and listed
operating characteristics and location of MTTF calculator for device, p. 8
?
Added Product Documentation and Revision History, p. 17
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6S9060NR1 | MOSFET RF N-CH 28V 14W TO-270-2 |
| MRF6S9125MR1 | MOSFET RF N-CH 28V 27W TO-270-4 |
| MRF6S9125NR1 | MOSFET RF N-CH 28V 27W TO-270-4 |
| MRF6S9130HSR5 | MOSFET RF N-CHAN 28V 27W NI-780S |
| MRF6S9160HSR5 | MOSFET RF N-CHAN 28V 35W NI-780S |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S9045NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S9060 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S9060MBR1 | 功能描述:MOSFET RF N-CH 28V 14W TO-272-2 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6S9060MR1 | 功能描述:MOSFET RF N-CH 28V 14W TO-270-2 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6S9060N | 制造商:Freescale Semiconductor 功能描述:MRF6S9060N - Bulk |
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