- 您现在的位置：买卖IC网 > Datasheet目录93 > MRF6V2150NBR5 (Freescale Semiconductor)MOSFET RF N-CH 50V TO272-4 Datasheet资料下载
参数资料
| 型号： | MRF6V2150NBR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 11/18页 |
| 文件大小： | 1492K |
| 描述： | MOSFET RF N-CH 50V TO272-4 |
| 产品培训模块： | RF Broadcast Solutions |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 220MHz |
| 增益： | 25dB |
| 电压 - 测试： | 50V |
| 额定电流： | 2.5mA |
| 电流 - 测试： | 450mA |
| 功率 - 输出： | 150W |
| 电压 - 额定： | 110V |
| 封装/外壳： | TO-272BB |
| 供应商设备封装： | TO-272 WB-4 |
| 包装： | 标准包装 |
| 其它名称： | MRF6V2150NBR5DKR |
2
RF Device Data
Freescale Semiconductor
MRF6V2150NR1 MRF6V2150NBR1
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 100 Vdc, VGS
=0Vdc)
IDSS
?
?
2.5
mA
Zero Gate Voltage Drain Leakage Current
(VDS
=50Vdc,VGS
=0Vdc)
IDSS
?
?
50
μAdc
Drain--Source Breakdown Voltage
(ID
=75mA,VGS
=0Vdc)
V(BR)DSS
110
?
?
Vdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
10
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 400
μAdc)
VGS(th)
1
1.62
3
Vdc
Gate Quiescent Voltage
(VDD
=50Vdc,ID
= 450 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.6
3.5
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=1Adc)
VDS(on)
?
0.26
?
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
1.6
?
pF
Output Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
93
?
pF
Input Capacitance
(VDS
=50Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
163
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 450 mA, Pout
= 150 W, f = 220 MHz, CW
Power Gain
Gps
23.5
25
26.5
dB
Drain Efficiency
ηD
66
68.3
?
%
Input Return Loss
IRL
?
-- 1 7
-- 9
dB
Typical Performances
(In Freescale 27 MHz and 450 MHz Test Fixtures, 50 ohm system) VDD
=50Vdc,IDQ
= 450 mA, Pout
= 150 W CW
Power Gain f = 27 MHz
f = 450 MHz
Gps
?
?
32.3
22.9
?
?
dB
Drain Efficiency f = 27 MHz
f = 450 MHz
ηD
?
?
78.7
57.6
?
?
%
Input Return Loss f = 27 MHz
f = 450 MHz
IRL
?
?
--10.6
--17.6
?
?
dB
ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting)
PRIOR TO STARTING SYSTEM DESIGN
to
ensure proper mounting of these devices.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6V2300NR5 | MOSFET RF N-CH 300W TO-270-4 |
| MRF6V3090NR5 | FET RF N-CH 860MHZ 50V TO270-4 |
| MRF6V4300NR5 | MOSFET RF N-CH 300W TO-270-4 |
| MRF6VP11KHR6 | MOSFET RF N-CH 1000W NI1230 |
| MRF6VP121KHSR6 | MOSFET RF N-CH 50V NI-1230S |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V2150NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2150 Series 10 - 450 MHz 150 W 50 V N-Channel RF Power MOSFET - TO-272 |
| MRF6V2150NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 150W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2150NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2150NR1-CUT TAPE | 制造商:Freescale 功能描述:RF POWER MOSFET 10-450 MHz, 150 W, 50 V |
| MRF6V2300N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
发布紧急采购，3分钟左右您将得到回复。