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| 型号： | MRF6VP3450HSR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/18页 |
| 文件大小： | 1077K |
| 描述： | MOSFET RF N-CH 450W NI1230S |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 860MHz |
| 增益： | 22.5dB |
| 电压 - 测试： | 50V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.4A |
| 功率 - 输出： | 90W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230S |
| 供应商设备封装： | NI-1230S |
| 包装： | 带卷 (TR) |
ll rights reserved.MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of these devices make them ideal for large--signal, common--source amplifier
applications in 50 volt analog or digital television transmitter equipment.
?
Typical DVB--T OFDM Performance: VDD
=50Volts,IDQ
= 1400 mA,
Pout
= 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
Power Gain ? 22.5 dB
Drain Efficiency ? 28%
ACPR @ 4 MHz Offset ? --62 dBc @ 4 kHz Bandwidth
?
Typical Broadband Two--Tone Performance: VDD
=50Volts,IDQ
= 1400 mA,
Pout
= 450 Watts PEP, f = 470--860 MHz
Power Gain ? 22 dB
Drain Efficiency ? 44%
IM3 ? --29 dBc
?
Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz:
450 Watts CW
90 Watts Avg. (DVB--T OFDM Signal, 10 dB PAR, 7.61 MHz Channel
Bandwidth)
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Input Matched for Ease of Use
?
Qualified Up to a Maximum of 50 VDD
Operation
?
Integrated ESD Protection
?
Designed for Push--Pull Operation
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
RoHS Compliant
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In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Document Number: MRF6VP3450H
Rev. 4, 4/2010
Freescale Semiconductor
Technical Data
860 MHz, 450 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
MRF6VP3450HR6
MRF6VP3450HR5
MRF6VP3450HSR6
MRF6VP3450HSR5
CASE 375D--05, STYLE 1
NI--1230
MRF6VP3450HR6(HR5)
PARTS ARE PUSH--PULL
(Top View)
GSA
31RFoutA/VDSA
GSB
42RFoutB/VDSB
RFinA/V
RFinB/V
Figure 1. Pin Connections
CASE 375E--04, STYLE 1
NI--1230S
MRF6VP3450HSR6(HSR5)
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Freescale Semiconductor, Inc., 2008--2010.
A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6VP41KH | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6VP41KHR5 | 功能描述:射频MOSFET电源晶体管 VHV6 450MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP41KHR6 | 功能描述:射频MOSFET电源晶体管 VHV6 450MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP41KHR7 | 功能描述:射频MOSFET电源晶体管 VHV6 450MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP41KHR7 | 制造商:Freescale Semiconductor 功能描述:RF POWER FET N CH 110V 375D-05 |
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