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参数资料
| 型号： | MRF6VP3450HSR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 16/18页 |
| 文件大小： | 1077K |
| 描述： | MOSFET RF N-CH 450W NI1230S |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 860MHz |
| 增益： | 22.5dB |
| 电压 - 测试： | 50V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.4A |
| 功率 - 输出： | 90W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230S |
| 供应商设备封装： | NI-1230S |
| 包装： | 带卷 (TR) |
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
ηD
Gps
23.5
VDD
=50Vdc,IDQ
= 1200 mA, f = 860 MHz
23
Pulse Width = 50
μsec, Duty Cycle = 2.5%
50
1
1000
02010
30
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
100
10
Coss
Crss
Measured with
±30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
1
100
110100
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
I
D
, DRAIN CURRENT (AMPS)
24
10
0
60
100
22
21.5
20.5
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
21
18
1000
20
52
67
30
62
Pin, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus
Input Power
60
38
58
31 32 33 34 35 36 37
P
out
, OUTPUT POWER (dBm)
16
24
0
23
22
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
100
21
600 700
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
, POWER GAIN (dB)
18
25
10
22
24
Pulse Width = 50
μsec, Duty Cycle = 2.5%
23
100 1000
VDD
=50Vdc,IDQ
= 1200 mA, f = 860 MHz
Pulse Width = 50
μsec, Duty Cycle = 2.5%
57
54
20
200 300 400 500
VDD
=40V
45 V
50 V
ηD
25_C
TC
=--30_C
85_C
Gps
19
21
20
VDD
=50Vdc,IDQ
= 1200 mA, f = 860 MHz
TC
=25_C
TJ= 150_C
0
70
40
60
50
10
30
20
η
D
,
DRAIN EFFICIENCY (%)
20
10
TJ
= 175_C
TJ
= 200_C
22.5
19.5
19
18.5
5
15
25
35
45
55
Actual
Ideal
VDD
=50Vdc,IDQ
= 1200 mA, f = 860 MHz
Pulse Width = 12
μsec, Duty Cycle = 1%
P1dB = 57.15 dBm
(519 W)
53
56
55
59
61
64
63
66
65
39 40 4241
P3dB = 57.85 dBm (610 W)
P2dB = 57.65 dBm
(582 W)
19
18
17
-- 3 0_C
25_C
85_C
Note:
Each side of device measured separately.
Note:
Each side of device measured separately.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6VP41KH | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6VP41KHR5 | 功能描述:射频MOSFET电源晶体管 VHV6 450MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP41KHR6 | 功能描述:射频MOSFET电源晶体管 VHV6 450MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP41KHR7 | 功能描述:射频MOSFET电源晶体管 VHV6 450MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP41KHR7 | 制造商:Freescale Semiconductor 功能描述:RF POWER FET N CH 110V 375D-05 |
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