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参数资料
| 型号： | MRF8P8300HR5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 6/15页 |
| 文件大小： | 641K |
| 代理商： | MRF8P8300HR5 |
14
RF Device Data
Freescale Semiconductor
MRF8P8300HR6 MRF8P8300HSR6
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF8P8300H and MRF8P8300HS parts will be available for 2 years after release of
MRF8P8300H and MRF8P8300HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered
in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and
reel option will be offered MRF8P8300H and MRF8P8300HS in the R6 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2011
Initial Release of Data Sheet
相关PDF资料 |
PDF描述 |
|---|---|
| MRF8P8300HSR6 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8P9040NR1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF8P9040NBR1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF8P9040GNR1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF8S18120HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8P8300HR6 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HSR5 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HSR6 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P9040GN | 制造商:Freescale Semiconductor 功能描述:NONSALEABLE BULK DEVICE - Bulk |
| MRF8P9040GNR1 | 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 40W TO270WB4G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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