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参数资料
| 型号： | MRF8P8300HR5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 9/15页 |
| 文件大小： | 641K |
| 代理商： | MRF8P8300HR5 |
MRF8P8300HR6 MRF8P8300HSR6
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 2000 mA, 790--820 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
340
—
W
IMD Symmetry @ 290 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
35
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
35
—
MHz
Gain Flatness in 30 MHz Bandwidth @ Pout =96 W Avg.
GF
—
0.5
—
dB
Gain Variation over Temperature
(--30°Cto+85°C)
G
—
0.0185
—
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C)
P1dB
—
0.0076
—
dB/°C
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| MRF8P8300HR6 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HSR5 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HSR6 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P9040GN | 制造商:Freescale Semiconductor 功能描述:NONSALEABLE BULK DEVICE - Bulk |
| MRF8P9040GNR1 | 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 40W TO270WB4G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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