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| 型号： | MRF8P8300HR5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 8/15页 |
| 文件大小： | 641K |
| 代理商： | MRF8P8300HR5 |
2
RF Device Data
Freescale Semiconductor
MRF8P8300HR6 MRF8P8300HSR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS =70 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
—
1
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage (1)
(VDS =10 Vdc, ID = 400 μAdc)
VGS(th)
1.5
2.3
3.0
Vdc
Gate Quiescent Voltage
(VDD =28 Vdc, IDQ = 2000 mA, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain--Source On--Voltage (1)
(VGS =10 Vdc, ID =3 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 2000 mA, Pout = 96 W Avg., f = 820 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Power Gain
Gps
20.0
20.9
23.5
dB
Drain Efficiency
ηD
34.5
35.7
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.9
6.1
—
dB
Adjacent Channel Power Ratio
ACPR
—
--38.2
--36.5
dBc
Input Return Loss
IRL
—
--12
--9
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 2000 mA, Pout =96 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
790 MHz
20.9
35.2
6.2
--38.1
--11
805 MHz
21.0
35.5
6.2
--38.1
--12
820 MHz
20.9
35.7
6.1
--38.2
--12
1. Each side of device measured separately.
2. Part internally matched both on input and output.
(continued)
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