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参数资料
| 型号： | MRF8S21200HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 5/14页 |
| 文件大小： | 580K |
| 描述： | MOSFET RF N-CH 48W NI-1230H |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 2.14GHz |
| 增益： | 18.1dB |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 1.4A |
| 功率 - 输出： | 48W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
MRF8S21200HR6 MRF8S21200HSR6
13
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
?
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2009
?
Initial Release of Data Sheet
1
Nov. 2009
?
Removed Typical Pout
@ 1 dB Compression Point bullet from p. 1, and P1dB from the Typical Performance
table, p. 3. P1dB was artificially low due to fixture tuning tradeoffs, i.e., fixture was tuned for back--off
linearity versus optimum P1dB.
2
Oct. 2010
?
Changed Human Body Model ESD rating from Class 1A to Class 2 to reflect recent ESD test results of the
device, p. 2.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8S21200HR6_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF8S21200HSR5 | 功能描述:射频无线杂项 HV8 2.1GHZ 48W NI1230HS RoHS:否 制造商:Texas Instruments 工作频率:112 kHz to 205 kHz 电源电压-最大:3.6 V 电源电压-最小:3 V 电源电流:8 mA 最大功率耗散: 工作温度范围:- 40 C to + 110 C 封装 / 箱体:VQFN-48 封装:Reel |
| MRF8S21200HSR6 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 48W NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S23120H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF8S23120HR3 | 功能描述:射频MOSFET电源晶体管 HV8 2.3GHZ 120W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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