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参数资料
| 型号： | MRFE6S9200HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 4/11页 |
| 文件大小： | 393K |
| 描述： | MOSFET RF N-CH 58W 28V NI-880S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 880MHz |
| 增益： | 21dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.4A |
| 功率 - 输出： | 58W |
| 电压 - 额定： | 66V |
| 封装/外壳： | NI-880S |
| 供应商设备封装： | NI-880S |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRFE6S9200HR3 MRFE6S9200HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 66 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
10
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 600
μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD
= 28 Vdc, I
D
= 1400 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.8
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 4.1 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
2.41
?
pF
Output Capacitance
(VDS
=
28
Vdc ±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
74.61
?
pF
Input Capacitance
(VDS
= 28
Vdc, VGS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Ciss
?
557.27
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, P
out
= 58 W Avg. W-CDMA, f = 880 MHz,
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
20
21
23
dB
Drain Efficiency
ηD
33
35
?
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
6
6.36
?
dB
Adjacent Channel Power Ratio
ACPR
?
-40
-36.5
dBc
Input Return Loss
IRL
?
-15
-9
dB
Typical Performances
(In Freescale Test Fixture, 50
οhm system) VDD
= 28
Vdc, IDQ
= 1400
mA, 865-900
MHz Bandwidth
Video Bandwidth @ 200 W PEP Pout
where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
?
10
?
MHz
Gain Flatness in 35 MHz Bandwidth @ Pout
= 58 W Avg.
GF
?
0.5
?
dB
Average Deviation from Linear Phase in 35 MHz Bandwidth
@ Pout
= 200 W CW
Φ
?
0.28
?
°
Average Group Delay @ Pout
= 200 W CW, f = 880 MHz
Delay
?
3.72
?
ns
Part-to-Part Insertion Phase Variation @ Pout
= 200 W CW,
f = 880 MHz, Six Sigma Window
ΔΦ
?
15.9
?
°
Gain Variation over Temperature (-30°C to +85°C)
ΔG
?
0.016
?
dB/°C
Output Power Variation over Temperature (-30°C to +85°C)
ΔP1dB
?
0.008
?
dBm/°C
1. Part is internally matched on input.
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相关代理商/技术参数 |
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| MRFE6S9201HR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9201HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9201HSR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9201HSR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9205HR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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