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参数资料
| 型号： | MRFE6VP61K25HSR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 20/23页 |
| 文件大小： | 895K |
| 描述： | MOSFET RF N-CH 1.25KW NI-1230S |
| 产品培训模块： | RF Power LDMOS Enhanced Ruggedness Solutions |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 230MHz |
| 增益： | 24dB |
| 电压 - 测试： | 50V |
| 电流 - 测试： | 100mA |
| 功率 - 输出： | 1250W |
| 电压 - 额定： | 125V |
| 封装/外壳： | NI-1230S |
| 供应商设备封装： | NI-1230S |
| 包装： | 带卷 (TR) |
6
RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
TYPICAL CHARACTERISTICS
50
10
2000
02010
30
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
1000
100
Coss
Measured with
?30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
Note:
Each side of device measured separately.
1
59
66
35
Pin, INPUT POWER (dBm) PEAK
Figure 5. Output Power versus Input Power
64
36 37 38 39 40 41 42
P
out
, OUTPUT POWER (dBm) PULSED
63
60
Actual
Ideal
VDD
=50Vdc,IDQ
= 100 mA, f = 230 MHz
Pulse Width = 100
?sec, 20% Duty Cycle
P1dB = 61.3 dBm
(1333 W)
62
61
65
P3dB = 61.9 dBm (1553 W)
P2dB = 61.7 dBm (1472 W)
26
30
90
100
24
70
50
Pout, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
?
D,
DRAIN EFFICIENCY (%)
22
20
2000
21
40
60
80
23
25
16
23
0
20
19
Pout, OUTPUT POWER (WATTS) PEAK
Figure 7. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
200
18
1400 1600
17
400 800 1000 1200600
VDD
=30V
50 V
21
22
25
24
26
35 V
40 V
45 V
20
90
0
Pout, OUTPUT POWER (WATTS) PEAK
Figure 8. Drain Efficiency versus Output Power
70
200 400 600 800 1000 1200 1400
60
30
50
40
80
1600
Figure 9. Power Gain and Drain Efficiency versus
Output Power
Pout, OUTPUT POWER (WATTS) PEAK
G
ps
, POWER GAIN (dB)
19
21
20
100 20001000
2000
?D
25_C
TC
=--30_C
85_C
Gps
40
60
50
20
30
?
D
,
DRAIN EFFICIENCY (%)
-- 3 0_C
25_C
85_C
70
VDD
=30V
50 V
35 V
40 V
45 V
?
D,
DRAIN EFFICIENCY (%)
24
23
22
26
25
80
90
Crss
1000
?D
Gps
VDD
=50Vdc,IDQ
= 100 mA, f = 230 MHz
Pulse Width = 100
?sec, 20% Duty Cycle
IDQ
= 100 mA, f = 230 MHz
Pulse Width = 100
?sec, 20% Duty Cycle
IDQ
= 100 mA, f = 230 MHz
Pulse Width = 100
?sec, 20% Duty Cycle
VDD
=50Vdc,IDQ
= 100 mA, f = 230 MHz
Pulse Width = 100
?sec, 20% Duty Cycle
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6VP6300HR3 | 功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP6300HR3_11 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRFE6VP6300HR5 | 功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP6300HSR3 | 功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP6300HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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