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参数资料
型号： MT46V16M4
厂商： Micron Technology, Inc.
英文描述： 4 Meg x 4 x 4 banks DDR SDRAM(4 M x 4 x 4组，双数据速率同步动态RAM)
中文描述： 4梅格× 4 × 4银行DDR SDRAM内存（四米× 4 × 4组，双数据速率同步动态RAM）的
文件页数： 1/69页
文件大小： 2369K
代理商： MT46V16M4
1
64Mb: x4, x8, x16 DDR SDRAM
64Mx4x8x16DDR_B.p65 – Rev. B; Pub. 10/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
64Mb: x4, x8, x16
DDR SDRAM
KEY TIMING PARAMETERS
SPEED
GRADE
-7
-75
-8
CLOCK RATE
CL = 2**
133 MHz
100 MHz
100 MHz
DATA-OUT
WINDOW* WINDOW
2.5ns
2.5ns
3.4ns
ACCESS
DQS-DQ
SKEW
+0.5ns
+0.5ns
+0.6ns
CL = 2.5**
143 MHz
133 MHz
125 MHz
±0.75ns
±0.75ns
±0.8ns
*Minimum clock rate @ CL = 2 (-7, -8) and CL = 2.5 (-75)
**CL = CAS (Read) Latency
DOUBLE DATA RATE
(DDR) SDRAM
MT46V16M4 – 4 Meg x 4 x 4 banks
MT46V8M8 – 2 Meg x 8 x 4 banks
MT46V4M16 – 1 Meg x 16 x 4 banks
For the latest data sheet revisions, please refer to the Micron
www.micronsemi.com/datasheets/ddrsdramds.html
PIN ASSIGNMENT (TOP VIEW)
66-Pin TSOP
FEATURES
V
DD
= +2.5V ±0.2V, V
DD
Q = +2.5V ±0.2V
Bidirectional data strobe (DQS) transmitted/
received with data, i.e., source-synchronous data
capture (x16 has two – one per byte)
Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
DLL to align DQ and DQS transitions with CK
Four internal banks for concurrent operation
Data mask (DM) for masking write data (x16 has
two – one per byte)
Programmable burst lengths: 2, 4, or 8
Auto precharge option
Auto Refresh and Self Refresh Modes
Longer lead TSOP for improved reliability (OCPL)
2.5V I/O (SSTL_2 compatible)
OPTIONS
Configuration
16 Meg x 4
(4 Meg x 4 x 4 banks)
8 Meg x 8
(2 Meg x 8 x 4 banks)
4 Meg x 16 (1 Meg x 16 x 4 banks)
x16 IOL / IOH Drive
Full Drive Only
Reduced Drive Only
Programmable full or reduced drive
Plastic Package – OCPL
66-pin TSOP
(400 mil width, 0.65mm pin pitch)
Timing – Cycle Time
7.5ns @ CL = 2 (DDR266A
+
)
1
7.5ns @ CL = 2.5 (DDR266B)
2
10ns @ CL = 2 (DDR200)
3
Self Refresh
Standard
Low Power
MARKING
16M4
8M8
4M16
D1
D2
D3
TG
-7
-75
-8
none
L
NOTE:
1. Supports PC2100 modules with 2-2-2 timing
2. Supports PC2100 modules with 2.5-3-3 timing
3. Supports PC1600 modules with 2-2-2 timing
16 Meg x 4
4 Meg x 4 x 4 banks
4K
4K (A0–A11)
4 (BA0, BA1)
1K (A0–A9)
8 Meg x 8
2 Meg x 8 x 4 banks
4K
4K (A0–A11)
4 (BA0, BA1)
512 (A0–A8)
4 Meg x 16
1 Meg x 16 x 4 banks
4K
4K (A0–A11)
4 (BA0, BA1)
256 (A0–A7)
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
V
SS
DQ15
V
SS
Q
DQ14
DQ13
V
DD
Q
DQ12
DQ11
V
SS
Q
DQ10
DQ9
V
DD
Q
DQ8
NC
V
SS
Q
UDQS
DNU
V
REF
V
SS
UDM
CK#
CK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
x16
V
DD
DQ0
V
DD
Q
DQ1
DQ2
VssQ
DQ3
DQ4
V
DD
Q
DQ5
DQ6
VssQ
DQ7
NC
V
DD
Q
LDQS
NC
V
DD
NC
LDM
WE#
CAS#
RAS#
CS#
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
V
DD
x16
V
SS
DQ7
V
SS
Q
NC
DQ6
V
DD
Q
NC
DQ5
V
SS
Q
NC
DQ4
V
DD
Q
NC
NC
V
SS
Q
DQS
DNU
V
REF
V
SS
DM
CK#
CK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
x8
x4
V
SS
NC
V
SS
Q
NC
DQ3
V
DD
Q
NC
NC
V
SS
Q
NC
DQ2
V
DD
Q
NC
NC
V
SS
Q
DQS
DNU
V
REF
V
SS
DM
CK#
CK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
V
DD
DQ0
V
DD
Q
NC
DQ1
V
SS
Q
NC
DQ2
V
DD
Q
NC
DQ3
V
SS
Q
NC
NC
V
DD
Q
NC
NC
V
DD
NC
NC
WE#
CAS#
RAS#
CS#
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
V
DD
x8
x4
V
DD
NC
V
DD
Q
NC
DQ0
V
SS
Q
NC
NC
V
DD
Q
NC
DQ1
V
SS
Q
NC
NC
V
DD
Q
NC
NC
V
DD
NC
NC
WE#
CAS#
RAS#
CS#
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
V
DD
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
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相关代理商/技术参数
参数描述
MT46V16M8 制造商:MICRON 制造商全称:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM
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