8
64Mb: x4, x8, x16 DDR SDRAM
64Mx4x8x16DDR_B.p65
–
Rev. B; Pub. 10/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
64Mb: x4, x8, x16
DDR SDRAM
RESERVED NC PINS
1
TSOP PIN NUMBERS
42
17
19
SYMBOL
A12
A13
QFC#
TYPE
I
I
O
DESCRIPTION
Address input for 256Mb and 512Mb devices.
Address input for 1Gb devices.
FET Control: Optional at 128Mb and up. Used to control isolation
switches on modules. Open drain output.
51
DQS
I/O
Data Strobe: Output with read data, input with write data. DQS is
edge-aligned with read data, centered in write data. It is used to
capture data. For the x16 , LDQS is DQS for DQ0-DQ7 and UDQS is
DQS for DQ8-DQ15. Pin 16 is NC on x4 and x8.
Do Not Use: Must float to minimize noise.
DQ Power Supply: +2.5V ±0.2V. Isolated on the die for improved
noise immunity.
DQ Ground. Isolated on the die for improved noise immunity.
Power Supply: +2.5V ±0.2V.
Ground.
SSTL_2 reference voltage.
No Connect: These pins should be left unconnected.
16, 51
LDQS, UDQS
50
DNU
V
DD
Q
–
3, 9, 15, 55, 61
Supply
6, 12, 52, 58, 64
1, 18, 33
34, 48, 66
49
14, 17, 19, 25,
42, 43, 53
V
SS
Q
V
DD
V
SS
V
REF
NC
Supply
Supply
Supply
Supply
–
PIN DESCRIPTIONS (continued)
TSOP PIN NUMBERS
SYMBOL
TYPE
DESCRIPTION
NOTE:
1. NC pins not listed may also be reserved for other uses now or in the future. This table simply defines specific NC pins
deemed to be of importance.