- 您现在的位置：买卖IC网 > PDF目录385639 > MT46V16M4 (Micron Technology, Inc.) 4 Meg x 4 x 4 banks DDR SDRAM(4 M x 4 x 4组，双数据速率同步动态RAM) PDF资料下载
参数资料
| 型号： | MT46V16M4 |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | 4 Meg x 4 x 4 banks DDR SDRAM(4 M x 4 x 4组，双数据速率同步动态RAM) |
| 中文描述： | 4梅格× 4 × 4银行DDR SDRAM内存（四米× 4 × 4组，双数据速率同步动态RAM）的 |
| 文件页数： | 45/69页 |
| 文件大小： | 2369K |
| 代理商： | MT46V16M4 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页当前第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页
45
64Mb: x4, x8, x16 DDR SDRAM
64Mx4x8x16DDR_B.p65
–
Rev. B; Pub. 10/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
64Mb: x4, x8, x16
DDR SDRAM
MA X
I
DD
SPECIFICATIONS AND CONDITIONS (x4, x8)
(Notes: 1-5, 10, 12, 14; notes appear on pages 47-50) (0
°
C
≤
T
A
≤
+70
°
C; V
DD
Q = +2.5V ±0.2V, V
DD
= +2.5V ±0.2V)
PARAMETER/CONDITION
OPERATING CURRENT: One bank; Active-Precharge;
t
RC =
t
RC (MIN);
t
CK =
t
CK (MIN); DQ, DM and DQS inputs
changing once per clock cyle; Address and control inputs
changing once every two clock cycles;
OPERATING CURRENT: One bank; Active-Read-Precharge;
Burst = 2;
t
RC =
t
RC (MIN);
t
CK =
t
CK (MIN); I
OUT
= 0mA;
Address and control inputs changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle;
Power-down mode;
t
CK =
t
CK (MIN); CKE = LOW;
IDLE STANDBY CURRENT: CS# = HIGH; All banks idle;
t
CK =
t
CK (MIN); CKE = HIGH; Address and other control inputs
changing once per clock cycle. V
IN
=
V
REF
for DQ, DQS and DM
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active;
Power-down mode;
t
CK =
t
CK (MIN); CKE = LOW
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH;
One bank; Active-Precharge;
t
RC =
t
RAS (MAX);
t
CK =
t
CK (MIN);
DQ, DM, and DQS inputs changing twice per clock cycle; Address
and other control inputs changing once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst;
One bank active; Address and control inputs changing once per
clock cycle;
t
CK =
t
CK (MIN); I
OUT
= 0mA
OPERATING CURRENT: Burst = 2; Writes; Continuous burst;
One bank active; Address and control inputs changing once per
clock cycle;
t
CK =
t
CK (MIN); DQ, DM, and DQS inputs
changing twice per clock cycle
AUTO REFRESH CURRENT
SYMBOL
I
DD
0
-7
-75
85
-8
70
UNITS NOTES
mA
95
22,48
I
DD
1
115
105
90
mA
22, 48
I
DD
2P
5
5
5
mA
23, 32
50
51
I
DD
2F
50
50
40
mA
I
DD
3P
5
5
5
mA
23, 32
50
22
I
DD
3N
50
50
40
mA
I
DD
4R
130
125
115
mA
22, 48
I
DD
4W
115
105
100
mA
22
t
RC =
t
RFC (MIN)
t
RC =
15.625μs
Standard
Low power (L)
I
DD
5
I
DD
6
I
DD
7
I
DD
7
I
DD
8
140
5
1
600
300
130
5
1
600
300
125
5
2
600
270
mA
mA
mA
μA
mA
22,50
27,50
11
11
22, 49
SELF REFRESH CURRENT: CKE
≤
0.2V
OPERATING CURRENT: Four bank interleaving READs (BL = 4) with
auto precharge,
t
RC =
t
RC MIN;
t
CK =
t
RC (MIN); Address and
control inputs change only during Active READ, or WRITE commands.
相关PDF资料 |
PDF描述 |
|---|---|
| MT46V4M16 | 1 Meg x 16 x 4 banks DDR SDRAM(1M x 16 x 4组，双数据速率同步动态RAM) |
| MT46V8M8 | 2 Meg x 8 x 4 banks DDR SDRAM(2 M x 8 x 4组，双数据速率同步动态RAM) |
| MT46V2M32LG | DOUBLE DATA RATE DDR SDRAM |
| MT46V2M32V1 | DOUBLE DATA RATE DDR SDRAM |
| MT46V32M4-1 | DOUBLE DATA RATE DDR SDRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT46V16M8 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
发布紧急采购，3分钟左右您将得到回复。