45
64Mb: x4, x8, x16 DDR SDRAM
64Mx4x8x16DDR_B.p65
–
Rev. B; Pub. 10/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
64Mb: x4, x8, x16
DDR SDRAM
MA X
I
DD
SPECIFICATIONS AND CONDITIONS (x4, x8)
(Notes: 1-5, 10, 12, 14; notes appear on pages 47-50) (0
°
C
≤
T
A
≤
+70
°
C; V
DD
Q = +2.5V ±0.2V, V
DD
= +2.5V ±0.2V)
PARAMETER/CONDITION
OPERATING CURRENT: One bank; Active-Precharge;
t
RC =
t
RC (MIN);
t
CK =
t
CK (MIN); DQ, DM and DQS inputs
changing once per clock cyle; Address and control inputs
changing once every two clock cycles;
OPERATING CURRENT: One bank; Active-Read-Precharge;
Burst = 2;
t
RC =
t
RC (MIN);
t
CK =
t
CK (MIN); I
OUT
= 0mA;
Address and control inputs changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle;
Power-down mode;
t
CK =
t
CK (MIN); CKE = LOW;
IDLE STANDBY CURRENT: CS# = HIGH; All banks idle;
t
CK =
t
CK (MIN); CKE = HIGH; Address and other control inputs
changing once per clock cycle. V
IN
=
V
REF
for DQ, DQS and DM
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active;
Power-down mode;
t
CK =
t
CK (MIN); CKE = LOW
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH;
One bank; Active-Precharge;
t
RC =
t
RAS (MAX);
t
CK =
t
CK (MIN);
DQ, DM, and DQS inputs changing twice per clock cycle; Address
and other control inputs changing once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst;
One bank active; Address and control inputs changing once per
clock cycle;
t
CK =
t
CK (MIN); I
OUT
= 0mA
OPERATING CURRENT: Burst = 2; Writes; Continuous burst;
One bank active; Address and control inputs changing once per
clock cycle;
t
CK =
t
CK (MIN); DQ, DM, and DQS inputs
changing twice per clock cycle
AUTO REFRESH CURRENT
SYMBOL
I
DD
0
-7
-75
85
-8
70
UNITS NOTES
mA
95
22,48
I
DD
1
115
105
90
mA
22, 48
I
DD
2P
5
5
5
mA
23, 32
50
51
I
DD
2F
50
50
40
mA
I
DD
3P
5
5
5
mA
23, 32
50
22
I
DD
3N
50
50
40
mA
I
DD
4R
130
125
115
mA
22, 48
I
DD
4W
115
105
100
mA
22
t
RC =
t
RFC (MIN)
t
RC =
15.625μs
Standard
Low power (L)
I
DD
5
I
DD
6
I
DD
7
I
DD
7
I
DD
8
140
5
1
600
300
130
5
1
600
300
125
5
2
600
270
mA
mA
mA
μA
mA
22,50
27,50
11
11
22, 49
SELF REFRESH CURRENT: CKE
≤
0.2V
OPERATING CURRENT: Four bank interleaving READs (BL = 4) with
auto precharge,
t
RC =
t
RC MIN;
t
CK =
t
RC (MIN); Address and
control inputs change only during Active READ, or WRITE commands.