参数资料
型号: MT46V4M16
厂商: Micron Technology, Inc.
英文描述: 1 Meg x 16 x 4 banks DDR SDRAM(1M x 16 x 4组,双数据速率同步动态RAM)
中文描述: 1梅格× 16 × 4银行DDR SDRAM内存(100万× 16 × 4组,双数据速率同步动态RAM)的
文件页数: 59/69页
文件大小: 2369K
代理商: MT46V4M16
59
64Mb: x4, x8, x16 DDR SDRAM
64Mx4x8x16DDR_B.p65
Rev. B; Pub. 10/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
64Mb: x4, x8, x16
DDR SDRAM
Figure 30
Input Voltage Waveform
0.940V
V
IN
AC - Provides margin
between
V
OL
(MAX)
and
V
ILAC
1.100V
1.200V
1.225V
1.250V
1.275V
1.300V
1.400V
1.560V
V
IL
AC
V
IL
DC
V
REF
-AC Noise
V
REF
-DC Error
V
REF
+DC Error
V
REF
+AC Noise
V
IH
DC
V
IH
AC
V
OH(MIN)
(1.670V
1
for SSTL2 termination)
V
SS
Q
V
DD
Q (2.3V minimum)
V
OL
(MAX) (0.83V
2
for
SSTL2 termination)
System Noise Margin (Power/Ground,
Crosstalk, Signal Integrity Attenuation)
NOTE:
1. V
OH
(MIN) with test load is 1.927V
2. V
OL
(MAX) with test load is 0.373V
3. Numbers in diagram reflect nomimal
values utilizing circuit below.
Reference
Point
25
25
V
TT
Transmitter
Receiver
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