参数资料
型号: MT49H16M16
厂商: Micron Technology, Inc.
元件分类: 热敏电阻
英文描述: THERMISTOR PTC 100OHM 110DEG RAD
中文描述: 低延迟DRAM延迟DRAM
文件页数: 18/43页
文件大小: 652K
代理商: MT49H16M16
18
256: x16, x32 RLDRAM
MT49H8M32_3.p65 – Rev. 3, Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
ADVANCE
256Mb: x16, x32
2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature .............................. -55°C to +150°C
I/O Voltage ................................... -0.3V to + V
DD
Q + 0.3V
Voltage on V
EXT
Supply Relative to V
SS
...-0.3V to +2.8V
Voltage on V
DD
Supply Relative to V
SS
.....-0.3V to +2.1V
Voltage on V
DD
Q Supply Relative to V
SS
..-0.3V to +2.1V
Junction Temperature** ............................................ 100°C
RECOMMENDED DC OPERATION
RANGES
All values are recommended operating conditions un-
less otherwise noted. External on board (PCB) capaci-
tance values are required as follows:
V
DDQ
:2 x 0.1μF/device
V
DD
:2 x 0.1μF/device
V
REF
:0.1μF/device
V
EXT
:0.1μF/device
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(+20°C
T
J
+110°C; +1.75V
V
DD
+1.85V unless otherwise noted)
DESCRIPTION
Supply Voltage
Supply Voltage
Isolated Output Buffer Supply
Reference Voltage
SYMBOL
V
EXT
V
DD
V
DD
Q
V
REF
MIN
2.38
1.75
1.7
MAX
2.63
1.85
1.9
UNITS NOTES
V
V
V
V
1
1,
1, 4
1, 2, 3
0.95
x
V
DD
Q/2 1.05 x V
DD
Q/2
NOTE:
1. All voltages referenced to V
SS
(GND).
2. Typically the value of V
REF
is expect to be 0.5x V
DD
Q of the transmitting device. V
REF
is expected to track variations in
V
DD
Q.
3. Peak to peak AC noise on V
REF
must not exceed 2% V
REF
(
DC
).
4. During normal operation, V
DD
Q must not exceed V
DD
.
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional opera-
tion of the device at these or any other conditions above
those indicated in the operational sections of this speci-
fication is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliabil-
ity.
**Junction temperature depends upon package type,
cycle time, loading, ambient temperature, and airflow.
相关PDF资料
PDF描述
MT49H16M16FM REDUCED LATENCY DRAM RLDRAM
MT49H8M32 THERMISTOR PTC 100OHM 120DEG RAD
MT49H8M32FM REDUCED LATENCY DRAM RLDRAM
MT4C1M16E5DJ-6 EDO DRAM
MT4LC1M16E5DJ-6S EDO DRAM
相关代理商/技术参数
参数描述
MT49H16M16BM-4 制造商:Micron Technology Inc 功能描述:512MB 64MX72 DDR SDRAM MODULE PBF DIMM 2.5V REGISTERED - Trays
MT49H16M16FM 制造商:MICRON 制造商全称:Micron Technology 功能描述:REDUCED LATENCY DRAM RLDRAM
MT49H16M16FM-33 ES 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144PIN UBGA - Trays
MT49H16M16FM-33 TR 制造商:Micron Technology Inc 功能描述:16MX16 RLDRAM PLASTIC FBGA 1.8V COMMON I/O 8 BANKS 1.8V I/O - Tape and Reel
MT49H16M16FM-4 制造商:Micron Technology Inc 功能描述: 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144FBGA - Trays