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参数资料
| 型号： | MT49H16M16 |
| 厂商： | Micron Technology, Inc. |
| 元件分类： | 热敏电阻 |
| 英文描述： | THERMISTOR PTC 100OHM 110DEG RAD |
| 中文描述： | 低延迟DRAM延迟DRAM |
| 文件页数： | 20/43页 |
| 文件大小： | 652K |
| 代理商： | MT49H16M16 |
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20
256: x16, x32 RLDRAM
MT49H8M32_3.p65 – Rev. 3, Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
ADVANCE
256Mb: x16, x32
2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
I
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
(+20°C
￡
T
J
￡
+110°C; V
DD
= MAX unless otherwise noted)
DESCRIPTION
Operating Supply
Current
CONDITIONS
SYMBOL
I
DD
1
(V
DD
)
-3.3
248
-4
208
-5
168
UNITS
mA
NOTES
1
BL = 2,
t
CK = MIN,
t
RC = MIN,
1 bank active, Address
change up to 8 times
during minimum
t
RC
BL = 4,
t
CK = MIN,
t
RC = MIN,
4 banks interleave, Address
change up to 8 times
during minimum
t
RC
Continous data
BL = 2,
t
CK = MIN,
t
RC = MIN,
8 banks interleave, Address
change up to 8 times
during minimum
t
RC
Continous data
t
CK = MIN, CS# = 1
all banks idle,
Command toggling
I
DD
1
(V
EXT
)
17
16
15
mA
1
Operating Supply
Current
I
DD
4
R
(V
DD
)
403
337
271
mA
1
I
DD
4
R
(V
EXT
)
27
25
22
mA
1
Operating Supply
Current
I
DD
8
(V
DD
)
610
509
409
mA
1
I
DD
8
(V
EXT
)
41
36
32
mA
1
Standby
Current
I
DDS
(V
DD
)
TBD
TBD
TBD
mA
I
DDS
(V
EXT
)
TBD
TBD
TBD
mA
TYPICAL
NOTE:
1. Values determined with outputs in high impedance state.
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