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参数资料
| 型号： | MT49H16M16 |
| 厂商： | Micron Technology, Inc. |
| 元件分类： | 热敏电阻 |
| 英文描述： | THERMISTOR PTC 100OHM 110DEG RAD |
| 中文描述： | 低延迟DRAM延迟DRAM |
| 文件页数： | 9/43页 |
| 文件大小： | 652K |
| 代理商： | MT49H16M16 |
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9
256: x16, x32 RLDRAM
MT49H8M32_3.p65 – Rev. 3, Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
ADVANCE
256Mb: x16, x32
2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
PROGRAMMING DESCRIPTION
The following table shows, for three operating frequen-
cies, the different RLDRAM configurations that can be
programmed into the Mode Register. The Read Latency
(RL) values and the Write Latencies (WL) used by the
RLDRAM Programming Table
NOTE:
1. The speed sort -3.3 provides part functional up to 300 MHz in the configurations 4, 5,
and 6 only.
The functionality of the configurations 1, 2, and 3 is not guaranteed for speed sort -
3.3.
2. The speed sort -4 provides part functional up to 250 MHz in the configurations 3, 4, 5,
and 6 only.
The functionality of the configurations 1 and 2 is not guaranteed for speed sort -4.
3. The speed sort -5 provides part functional up to 200 MHz in all configurations.
RLDRAM for the two Burst Lengths (BL) are also indi-
cated. Finally, the minimum allowed
t
RC in clock cycles
and in ns are shown as well. The shaded areas correspond
to configurations that are not allowed.
FREQUENCY
-3.3 (300 MHz)
3
5
2
1
7
20.0
23.3
-4 (250 MHz)
2
3
5
5
2
2
1
1
6
7
24
28
-5 (200 MHz)
2
3
5
5
2
2
1
1
6
7
30
35
Unit
Config. Nb.
RL
WL (BL2)
WL (BL4)
t
RC (MIN)
t
RC (MIN)
1
5
2
1
5
2
5
2
1
6
4
6
3
2
8
5
7
4
3
9
6
8
5
4
10
33.3
TCK
TCK
TCK
TCK
ns
16.7
26.7
30.0
Config. Nb.
RL
WL (BL2)
WL (BL4)
t
RC (MIN)
t
RC (MIN)
1
5
2
1
5
20
4
6
3
2
8
32
5
7
4
3
9
36
6
8
5
4
10
40
TCK
TCK
TCK
TCK
ns
Config. Nb.
RL
WL (BL2)
WL (BL4)
t
RC (MIN)
t
RC (MIN)
1
5
2
1
5
25
4
6
3
2
8
40
5
7
4
3
9
45
6
8
5
4
10
50
TCK
TCK
TCK
TCK
ns
相关PDF资料 |
PDF描述 |
|---|---|
| MT49H16M16FM | REDUCED LATENCY DRAM RLDRAM |
| MT49H8M32 | THERMISTOR PTC 100OHM 120DEG RAD |
| MT49H8M32FM | REDUCED LATENCY DRAM RLDRAM |
| MT4C1M16E5DJ-6 | EDO DRAM |
| MT4LC1M16E5DJ-6S | EDO DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT49H16M16BM-4 | 制造商:Micron Technology Inc 功能描述:512MB 64MX72 DDR SDRAM MODULE PBF DIMM 2.5V REGISTERED - Trays |
| MT49H16M16FM | 制造商:MICRON 制造商全称:Micron Technology 功能描述:REDUCED LATENCY DRAM RLDRAM |
| MT49H16M16FM-33 ES | 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144PIN UBGA - Trays |
| MT49H16M16FM-33 TR | 制造商:Micron Technology Inc 功能描述:16MX16 RLDRAM PLASTIC FBGA 1.8V COMMON I/O 8 BANKS 1.8V I/O - Tape and Reel |
| MT49H16M16FM-4 | 制造商:Micron Technology Inc 功能描述: 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144FBGA - Trays |
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