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参数资料
| 型号： | MT49H16M16 |
| 厂商： | Micron Technology, Inc. |
| 元件分类： | 热敏电阻 |
| 英文描述： | THERMISTOR PTC 100OHM 110DEG RAD |
| 中文描述： | 低延迟DRAM延迟DRAM |
| 文件页数： | 2/43页 |
| 文件大小： | 652K |
| 代理商： | MT49H16M16 |
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2
256: x16, x32 RLDRAM
MT49H8M32_3.p65 – Rev. 3, Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
ADVANCE
256Mb: x16, x32
2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
NOTE:
1. When the BL4 setting is used, A18 is a “Don’t Care.”
FUNCTIONAL BLOCK DIAGRAM
8 Meg x 32
A0–A18, B0, B1, B2
Column Address
Buffer
Column Address
Counter
Refresh
Counter
Row Decoder
Memory Array
Bank 1
C
S
Row Address
Buffer
Row Decoder
Memory Array
Bank 0
C
S
Row Decoder
Memory Array
Bank 2
C
S
Row Decoder
Memory Array
Bank 3
C
S
Row Decoder
Memory Array
Bank 5
C
S
Row Decoder
Memory Array
Bank 4
C
S
Row Decoder
Memory Array
Bank 6
C
S
Row Decoder
Memory Array
Bank 7
C
C
C
A
W
C
R
D
D
V
R
S
Data Valid
DVLD
Data Read Strobe
DQS[3:0], DQS#[3:0]
Input Buffers
Output Buffers
Control Logic and Timing Generator
DQ0–DQ31
POWER-DOWN
Because the RLDRAM uses multiple power supply
voltage, the following sequence is required for power-
down.
Take all input signals to be V
SS
or High-Z
It is recommended to place Schottky diodes on the
board between the 2.5V and 1.8V power supplies.
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| MT49H8M32FM | REDUCED LATENCY DRAM RLDRAM |
| MT4C1M16E5DJ-6 | EDO DRAM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT49H16M16BM-4 | 制造商:Micron Technology Inc 功能描述:512MB 64MX72 DDR SDRAM MODULE PBF DIMM 2.5V REGISTERED - Trays |
| MT49H16M16FM | 制造商:MICRON 制造商全称:Micron Technology 功能描述:REDUCED LATENCY DRAM RLDRAM |
| MT49H16M16FM-33 ES | 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144PIN UBGA - Trays |
| MT49H16M16FM-33 TR | 制造商:Micron Technology Inc 功能描述:16MX16 RLDRAM PLASTIC FBGA 1.8V COMMON I/O 8 BANKS 1.8V I/O - Tape and Reel |
| MT49H16M16FM-4 | 制造商:Micron Technology Inc 功能描述: 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144FBGA - Trays |
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