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参数资料
| 型号： | MTB20N20E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 20 AMPERES 200 VOLTS |
| 中文描述： | 20 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 3/10页 |
| 文件大小： | 258K |
| 代理商： | MTB20N20E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
0
1
3
5
7
9
0
10
20
30
40
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
2.0
8.5
0
10
20
30
40
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
4
16
24
36
40
0.05
0.10
0.25
0.30
0.35
0
4
12
ID, DRAIN CURRENT (AMPS)
20
32
40
0.10
0.11
0.13
0.15
0.17
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0.4
1.2
1.6
2.0
2.4
0
200
1
10
100
1000
10000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
VGS = 10 V
ID = 10 A
–25
0
25
50
75
100
125
150
TJ = 25
°
C
VGS = 10 V
VDS
≥
10 V
TJ = –55
°
C
25
°
C
100
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
2
4
6
8
10
9 V
6 V
7 V
8 V
35
25
15
5
2.5 3.0
3.5 4.0
4.5 5.0
5.5 6.0
6.5 7.0
7.5 8.0
TJ = 100
°
C
25
°
C
–55
°
C
0.15
0.20
8
12
20
28
32
0.16
0.14
0.12
8
16
24
28
36
0.8
25
°
C
100
°
C
50
100
150
TJ = 125
°
C
VGS = 10 V
15 V
5 V
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|---|---|
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