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参数资料
| 型号： | MTB20N20E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 20 AMPERES 200 VOLTS |
| 中文描述： | 20 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 6/10页 |
| 文件大小： | 258K |
| 代理商： | MTB20N20E |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
025
50
75
100
125
300
200
100
400
150
600
500
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1.0
10
100
A
I
0.01
10
ID = 20 A
0.1
1.0
100
t, TIME (ms)
Figure 13. Thermal Response
r
T
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (
°
C)
Figure 15. D2PAK Power Derating Curve
P
R
JA = 50
°
C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
≈
450 mils x 350 mils
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
1.0E–05
1.0E–04
1.0E–02
0.1
1.0
0.01
1.0E–03
1.0E–01
1.0E+01
1.0E+00
D = 0.5
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
dc
100
μ
s
10
μ
s
1 ms
10 ms
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| MTB30N06VL | TMOS POWER FET 30 AMPERES 60 VOLTS |
| MTB30P06V | TMOS POWER FET 30 AMPERES 60 VOLTS |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB20N20ET4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(2+Tab) D2PAK T/R |
| MTB20SA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB20SAM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB20SAV | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB20SAVM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
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