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参数资料
| 型号： | MTB30N06VL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-03, D2PAK-3 |
| 文件页数： | 3/10页 |
| 文件大小： | 259K |
| 代理商： | MTB30N06VL |
MTB30N06VL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
63
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
μAdc
GateBody Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.5
4.0
2.0
Vdc
mV/°C
Static DraintoSource OnResistance (VGS = 5 Vdc, ID = 15 Adc)
RDS(on)
0.033
0.05
Ohms
DraintoSource OnVoltage
(VGS = 5 Vdc, ID = 30 Adc)
(VGS = 5 Vdc, ID = 15 Adc, TJ = 150°C)
VDS(on)
1.1
1.8
1.73
Vdc
Forward Transconductance (VDS = 6.25 Vdc, ID = 15 Adc)
gFS
13
21
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
1130
1580
pF
Output Capacitance
Coss
360
500
Transfer Capacitance
Crss
95
190
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 30 Adc,
VGS = 5 Vdc,
RG = 9.1 Ω)
td(on)
14
30
ns
Rise Time
tr
260
520
TurnOff Delay Time
td(off)
54
110
Fall Time
tf
108
220
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 30 Adc,
VGS = 5 Vdc)
QT
27
40
nC
Q1
5
Q2
17
Q3
15
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 30 Adc, VGS = 0 Vdc)
(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
0.98
0.89
1.6
Vdc
Reverse Recovery Time
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
86
ns
ta
49
tb
37
Reverse Recovery Stored
Charge
QRR
0.228
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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