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参数资料
| 型号： | MTB30N06VL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-03, D2PAK-3 |
| 文件页数： | 4/10页 |
| 文件大小： | 259K |
| 代理商： | MTB30N06VL |
MTB30N06VL
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
01
2
3
0
10
60
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
13
5
10
0
20
50
60
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
010
20
60
0.02
0.06
0.04
0.01
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
020
30
60
0
0.02
0.04
0.06
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
0
1020
4050
60
10
100
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VGS = 10 V
8 V
6 V
5 V
3 V
VGS = 10 V
TJ = 100°C
25°C
55°C
25°C
TJ = 25°C
VGS = 5 V
10 V
VGS = 0 V
TJ = 125°C
30
50
4
30
10
30
VDS ≥ 10 V
TJ = 55°C
100°C
4 V
2
46
40
0.08
0
1000
1
100°C
56
7
89
10
20
40
0.07
0.05
0.03
40
50
40
50
0.01
0.03
0.05
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
50
0.6
0.8
1.2
1.6
1.8
TJ, JUNCTION TEMPERATURE (°C)
25
0
25
50
75
100
125
150
VGS = 5 V
ID = 15 A
1
1.4
0.4
0.2
0
2
175
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