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参数资料
| 型号： | MTD20P03HDL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369C-01, DPAK-3 |
| 文件页数： | 2/9页 |
| 文件大小： | 89K |
| 代理商： | MTD20P03HDL |
MTD20P03HDL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
15
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
mAdc
GateBody Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.5
4.0
2.0
Vdc
mV/
°C
Static DraintoSource OnResistance
(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 9.5 Adc)
RDS(on)
120
90
99
m
W
DraintoSource OnVoltage (VGS = 5.0 Vdc)
(ID = 19 Adc)
(ID = 9.5 Adc, TJ = 125°C)
VDS(on)
0.94
2.2
1.9
Vdc
Forward Transconductance (VDS = 8.0 Vdc, ID = 9.5 Adc)
gFS
5.0
6.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Ciss
770
1064
pF
Output Capacitance
Coss
360
504
Transfer Capacitance
Crss
130
182
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
(VDD = 15 Vdc, ID = 19 Adc,
VGS = 5.0 Vdc, RG = 1.3 W)
td(on)
18
25.2
ns
Rise Time
tr
178
246.4
TurnOff Delay Time
td(off)
21
26.6
Fall Time
tf
72
98
Gate Charge
(See Figure 8)
(VDS = 24 Vdc, ID =19 Adc,
VGS = 5.0 Vdc)
QT
15
22.4
nC
Q1
3.0
Q2
11
Q3
8.2
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 19 Adc, VGS = 0 Vdc)
(IS = 19 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
3.1
2.56
3.4
Vdc
Reverse Recovery Time
(See Figure 15)
(IS = 19 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
78
ns
ta
50
tb
28
Reverse Recovery Stored Charge
QRR
0.209
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
7.5
nH
3. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
5. Reflects typical values. Cpk = Absolute Value of Spec (SpecAVG/3.516 mA).
相关PDF资料 |
PDF描述 |
|---|---|
| MTD20P03HDL1 | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P03HDLT4 | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P03HDLG | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P06HDLT4G | 15 A, 60 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P06HDLG | 15 A, 60 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD20P03HDL1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD20P03HDL1G | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail |
| MTD20P03HDLT4 | 功能描述:MOSFET P-CH 30V 19A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MTD20P06 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM |
| MTD20P06HDL | 制造商:ON Semiconductor 功能描述:MOSFET P LOGIC D-PAK |
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