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参数资料
| 型号： | MTD20P03HDL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369C-01, DPAK-3 |
| 文件页数： | 6/9页 |
| 文件大小： | 89K |
| 代理商： | MTD20P03HDL |
MTD20P03HDL
http://onsemi.com
6
I S
,SOURCE
CURRENT
t, TIME
Figure 11. Reverse Recovery Time (trr)
di/dt = 300 A/
ms
Standard Cell Density
High Cell Density
tb
trr
ta
trr
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance
General Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 ms. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) TC)/(RqJC).
A power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
nonlinearly with an increase of peak current in avalanche
and peak junction temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 13). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
E
AS
,SINGLE
PULSE
DRAINT
OSOURCE
A
V
ALANCHE
ENERGY
(mJ)
TJ, STARTING JUNCTION TEMPERATURE (°C)
0
25
50
75
100
125
120
200
40
80
150
160
0.1
1.0
100
1.0
0.1
10
100
ms
1 ms
dc
10 ms
ID = 19 A
VGS = 20 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
相关PDF资料 |
PDF描述 |
|---|---|
| MTD20P03HDL1 | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P03HDLT4 | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P03HDLG | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P06HDLT4G | 15 A, 60 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P06HDLG | 15 A, 60 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD20P03HDL1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD20P03HDL1G | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail |
| MTD20P03HDLT4 | 功能描述:MOSFET P-CH 30V 19A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MTD20P06 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM |
| MTD20P06HDL | 制造商:ON Semiconductor 功能描述:MOSFET P LOGIC D-PAK |
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