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参数资料
| 型号： | MTD20P03HDL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369C-01, DPAK-3 |
| 文件页数： | 5/9页 |
| 文件大小： | 89K |
| 代理商： | MTD20P03HDL |
MTD20P03HDL
http://onsemi.com
5
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
QG, TOTAL GATE CHARGE (nC)
RG, GATE RESISTANCE (OHMS)
t,TIME
(ns)
V
DS
,DRAINT
OSOURCE
VOL
TAGE
(VOL
TS)
V
GS
,GA
TETOSOURCE
VOL
TAGE
(VOL
TS)
110
1000
10
100
VDD = 15 V
ID = 19 A
VGS = 5.0 V
TJ = 25°C
tr
tf
td(on)
td(off)
0
2
4
8
12
16
610
5
3
1
0
4
2
7
35
25
20
15
5
10
0
VGS
ID = 19 A
TJ = 25°C
VDS
Q3
Q1
30
6
14
QT
Q2
DRAINTOSOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 12. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
Figure 10. Diode Forward Voltage versus Current
I S
,SOURCE
CURRENT
(AMPS)
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
0.3
1.9
0
8
12
16
20
4
1.1
VGS = 0 V
TJ = 25°C
3.1
1.5
2.7
0.7
2.3
相关PDF资料 |
PDF描述 |
|---|---|
| MTD20P03HDL1 | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P03HDLT4 | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P03HDLG | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P06HDLT4G | 15 A, 60 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P06HDLG | 15 A, 60 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD20P03HDL1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD20P03HDL1G | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail |
| MTD20P03HDLT4 | 功能描述:MOSFET P-CH 30V 19A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MTD20P06 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM |
| MTD20P06HDL | 制造商:ON Semiconductor 功能描述:MOSFET P LOGIC D-PAK |
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