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| 型号： | MTD20P06HDLT4 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 15A DPAK |
| 产品变化通告： | Product Discontinuation 30/Jun/2004 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 175 毫欧 @ 7.5A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 29nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1190pF @ 25V |
| 功率 - 最大： | 72W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 带卷 (TR) |
| 其它名称： | MTD20P06HDLT4OS |
MTD20P06HDL
Preferred Device
Power MOSFET
20 Amps, 60 Volts, Logic
Level
P?Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain?to?source diode with a fast recovery time. Designed for
low?voltage, high?speed switching applications in power supplies,
converters and PWM motor controls, and other inductive loads. The
avalanche energy capability is specified to eliminate the guesswork in
designs where inductive loads are switched, and to offer additional
safety margin against unexpected voltage transients.
http://onsemi.com
20 AMPERES, 60 VOLTS
R DS(on) = 175 m W
P?Channel
D
Features
? Ultra Low R DS(on) , High?Cell Density, HDTMOS
? Diode is Characterized for Use in Bridge Circuits
? I DSS and V DS(on) Specified at Elevated Temperature
? Avalanche Energy Specified
? Pb?Free Package is Available
G
S
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
MARKING DIAGRAM & PIN ASSIGNMENTS
Rating
Symbol
Value
Unit
Drain?Source Voltage
Drain?Gate Voltage (R GS = 1.0 M W )
Gate?Source Voltage
? Continuous
? Non?Repetitive (t p v 10 ms)
V DSS
V DGR
V GS
V GSM
60
60
" 15
" 20
Vdc
Vdc
Vdc
Vpk
1 2
3
4
DPAK
CASE 369C
Gate 1
Drain 2
Source 3
YWW
20P
06HLG
4
Drain
Drain Current
? Continuous
? Continuous @ 100 ° C
? Single Pulse (t p v 10 m s)
I D
I D
I DM
15
9.0
45
Adc
Apk
(Surface Mount)
STYLE 2
20P06HL = Device Code
Total Power Dissipation
Derate above 25 ° C
Total Power Dissipation @ T C = 25 ° C (Note 2)
Operating and Storage Temperature Range
P D
T J , T stg
72
0.58
1.75
?55 to
W
W/ ° C
W
° C
Y
WW
G
= Year
= Work Week
= Pb?Free Package
150
ORDERING INFORMATION
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
E AS
300
mJ
Device
Package
Shipping ?
(V DD = 25 Vdc, V GS = 5.0 Vdc,
I L = 15 Apk, L = 2.7 mH, R G = 25 W )
MTD20P06HDL
DPAK
75 Units/Rail
Thermal Resistance
° C/W
MTD20P06HDLT4
DPAK
2500 Tape & Reel
? Junction?to?Case
? Junction?to?Ambient (Note 1)
? Junction?to?Ambient (Note 2)
R q JC
R q JA
R q JA
1.73
100
71.4
MTD20P06HDLT4G
DPAK
(Pb?Free)
2500 Tape & Reel
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. inch pad size.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
June, 2006 ? Rev. 6
1
Publication Order Number:
MTD20P06HDL/D
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